MOSFET N-Channel, SUPREMOS 600 V, 76 A, 36 m FCH76N60N Description The SUPREMOS MOSFET is ON Semiconductors next www.onsemi.com generation of high voltage superjunction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise V R MAX I MAX DS DS(ON) D process control provides lowest Rsp onresistance, superior switching 600 V 36 m 10 V 76 A performance and ruggedness. SUPREMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial D power applications. Features R = 28 m (Typ.) V = 10 V, I = 38 A DS(on) GS D G Ultra Low Gate Charge (Typ. Q = 218 nC) g Low Effective Output Capacitance (Typ. C = 914 pF) oss(eff.) 100% Avalanche Tested S This Device is PbFree and is RoHS Compliant N-CHANNEL MOSFET Applications Solar Inverter ACDC Power Supply G D S TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FCH 76N60N Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH76N60N = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: November, 2020 Rev. 3 FCH76N60N/DFCH76N60N MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FCH76N60N Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 30 V GSS I Drain Current A Continuous (T = 25C) 76 D C Continuous (T = 100C) 48.1 C I Drain Current Pulsed (Note 1) 228 A DM E Single Pulsed Avalanche Energy (Note 2) 8022 mJ AS I Avalanche Current (Note 1) 25.3 A AR E Repetitive Avalanche Energy (Note 1) 5.43 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 543 W D C Derate above 25C 4.34 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Second 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: pulsewidth limited by maximum junction temperature. 2. I = 25.3 A, R = 25 , starting T = 25 C AS G J 3. I 76 A, di/dt 200 A/ s, V 380 V, starting T = 25 C SD DD J THERMAL CHARACTERISTICS Symbol Parameter FCH76N60N Unit R Thermal Resistance, Junction to Case, Max. 0.23 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Package Method Reel Size Tape Width Quantity FCH76N60N FCH76N60N TO2473LD Tube N/A N/A 30 Units www.onsemi.com 2