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V = 10 V, I = 18 A The SupreMOS MOSFET is Fairchild Semiconductors next DS(on) GS D generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Q = 86 nC) g employing a deep trench filling process that differentiates it from Low Effective Output Capacitance (Typ. C = 361 pF) oss(eff.) the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, 100% Avalanche Tested superior switching performance and ruggedness. SupreMOS RoHS Compliant MOSFET is suitable for high frequency switching power con- verter applications such as PFC, server/telecom power, FPD TV Application power, ATX power, and industrial power applications. Solar Inverter AC-DC Power Supply D G G D G S D TO-220F TO-220 S S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCP36N60N FCPF36N60NT Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 36 36* C I Drain Current A D o - Continuous (T = 100 C) 22.7 22.7* C I Drain Current - Pulsed (Note 1) 108 108* A DM E Single Pulsed Avalanche Energy (Note 2) 1800 mJ AS I Avalanche Current (Note 1) 12 A AR E Repetitive Avalanche Energy (Note 1) 3.12 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 312 W C P Power Dissipation D o o - Derate Above 25C2.6 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, o T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCP36N60N FCPF36N60NT Unit R Thermal Resistance, Junction to Case, Max. 0.4 3.5 JC o R Thermal Resistance, Case to Heat Sink, Typ. 0.5 0.5 C/W CS R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 JA 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCP36N60N / FCPF36N60NT Rev. C2