FCP16N60 / FCPF16N60 600V N-Channel MOSFET December 2008 TM SuperFET FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features Description TM 650V T = 150C SuperFET is, Fairchilds proprietary, new generation of high J voltage MOSFET family that is utilizing an advanced charge Typ. R = 0.22 ds(on) balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge performance. This advanced technology has been tailored to minimize Low effective output capacitance (typ. Coss.eff=110pF) conduction loss, provide superior switching performance, and 100% avalanche tested withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC RoHS Compliant power conversion in switching mode operation for system miniaturization and higher efficiency. D G TO-220 TO-220F G D G S D S FCP Series FCPF Series S Absolute Maximum Ratings Symbol Parameter FCP16N60 FCPF16N60 Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25C) 16 16* A D C - Continuous (T = 100C) 10.1 10.1* A C (Note 1) I Drain Current - Pulsed A DM 48 48* V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 450 mJ AS I Avalanche Current (Note 1) 16 A AR E Repetitive Avalanche Energy (Note 1) 20.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 167 37.9 W D C - Derate above 25C 1.33 0.3 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCP16N60 FCPF16N60 Unit R Thermal Resistance, Junction-to-Case 0.75 3.3 C/W JC R Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W JA 2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCP16N60 / FCPF16N60 Rev. B1FCP16N60 / FCPF16N60 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FCP16N60 FCP16N60 TO-220 - - 50 FCPF16N60 FCPF16N60 TO-220F - - 50 Electrical Characteristics T = 25C unless otherwise noted C Symbol Parameter Conditions Min Typ Max Units Off Characteristics BV Drain-Source Breakdown Voltage V = 0V, I = 250A, T = 25C 600 -- -- V DSS GS D J V = 0V, I = 250A, T = 150C -- 650 -- V GS D J BV Breakdown Voltage Temperature DSS I = 250A, Referenced to 25C -- 0.6 -- V/C D / T Coefficient J BV Drain-Source Avalanche Breakdown V = 0V, I = 16A DSS GS D -- 700 -- V Voltage I Zero Gate Voltage Drain Current V = 600V, V = 0V -- -- 1 A DSS DS GS V = 480V, T = 125C -- -- 10 A DS C I Gate-Body Leakage Current, Forward V = 30V, V = 0V -- -- 100 nA GSSF GS DS I Gate-Body Leakage Current, Reverse V = -30V, V = 0V -- -- -100 nA GSSR GS DS On Characteristics V Gate Threshold Voltage V = V , I = 250A 3.0 -- 5.0 V GS(th) DS GS D R Static Drain-Source DS(on) V = 10V, I = 8A -- 0.22 0.26 GS D On-Resistance (Note 4) g Forward Transconductance V = 40V, I = 8A -- 11.5 -- S FS DS D Dynamic Characteristics C Input Capacitance V = 25V, V = 0V, -- 1730 2250 pF iss DS GS f = 1.0MHz C Output Capacitance -- 960 1150 pF oss C Reverse Transfer Capacitance -- 85 -- pF rss C Output Capacitance V = 480V, V = 0V, f = 1.0MHz -- 45 60 pF oss DS GS C eff. Effective Output Capacitance V = 0V to 400V, V = 0V -- 110 -- pF oss DS GS Switching Characteristics t Turn-On Delay Time V = 300V, I = 16A -- 42 85 ns d(on) DD D R = 25 G t Turn-On Rise Time -- 130 270 ns r t Turn-Off Delay Time -- 165 340 ns d(off) (Note 4, 5) t Turn-Off Fall Time -- 90 190 ns f Q Total Gate Charge V = 480V, I = 16A -- 55 70 nC g DS D V = 10V GS Q Gate-Source Charge -- 10.5 13 nC gs Q Gate-Drain Charge -- 28 -- nC gd (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 16 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A SM V Drain-Source Diode Forward Voltage V = 0V, I =16A -- -- 1.4 V SD GS S t Reverse Recovery Time V = 0V, I = 16A -- 435 -- ns rr GS S dI /dt =100A/s (Note 4) F Q Reverse Recovery Charge -- 7.0 -- C rr NOTES: by maximum junction temperature 1. Repetitive Rating: Pulse width limited 2. I = 8A, V = 50V, R = 25, Starting T = 25C AS DD G J 3. I 16A, di/dt 200A/s, V BV , Starting T = 25C SD DD DSS J 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 www.fairchildsemi.com FCP16N60 / FCPF16N60 Rev. B1