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FCPF400N60 N-Channel SuperFET II MOSFET December 2014 FCPF400N60 N-Channel SuperFET II MOSFET 600 V, 10 A, 400 m Features Description 650 V T = 150C J SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. R = 350 m DS(on) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Q = 28 nC) g and lower gate charge performance. This technology is tailored Low Effective Output Capacitance (Typ. C = 90 pF) oss(eff.) to minimize conduction loss, provide superior switching perfor- 100% Avalanche Tested mance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power RoHS Compliant applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Applications LCD / LED / PDP TV Lighting Solar Inverter AC-DC Power Supply D G G D S TO-220F S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCPF400N60 Unit V Drain to Source Voltage 600 V DSS - DC 20 V Gate to Source Voltage V GSS - AC (f > 1 Hz) 30 o - Continuous (T = 25 C) 10* C I Drain Current A D o - Continuous (T = 100 C) 6.3* C I Drain Current - Pulsed (Note 1) 30* A DM E Single Pulsed Avalanche Energy (Note 2) 211.6 mJ AS I Avalanche Current (Note 1) 2.3 A AR E Repetitive Avalanche Energy (Note 1) 1.06 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 31 W C P Power Dissipation D o o - Derate Above 25C0.25W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCPF400N60 Unit R Thermal Resistance, Junction to Case, Max. 4.0 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCPF400N60 Rev. C5