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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDA20N50F N-Channel UniFET FRFET MOSFET June 2014 FDA20N50F TM N-Channel UniFET FRFET MOSFET 500 V, 22 A, 260 m Features Description TM R = 220 m (Typ.) V = 10 V, I = 11 A UniFET MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 50 nC) This MOSFET is tailored to reduce on-state resistance, and to Low C (Typ. 27 pF) rss provide better switching performance and higher avalanche 100% Avalanche Tested energy strength. The body diodes reverse recovery perfor- mance of UniFET FRFET MOSFET has been enhanced by Improved dv/dt Capability lifetime control. Its trr is less than 100nsec and the reverse dv/dt RoHS Compliant immunity is 15V/ns while nrmal o planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove Applications additional component and improve system reliability in certain applications in which the performance of MOSFETs body diode PDPTV is significant. This device family is suitable for switching power Uninterruptible Power Supply converter applications such as power factor correction (PFC), AC-DC Power Supply flat panel display (FPD) TV power, ATX and electronic lamp bal- lasts. D G G D TO-3PN S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDA20N50F Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 22 C I Drain Current A D o - Continuous (T = 100 C) 13 C I Drain Current - Pulsed (Note 1) 88 A DM E Single Pulsed Avalanche Energy (Note 2) 1110 mJ AS I Avalanche Current (Note 1) 22 A AR E Repetitive Avalanche Energy (Note 1) 39 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 388 W C P Power Dissipation D o o - Derate above 25C3.1W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDA20N50F Unit R Thermal Resistance, Junction to Case, Max. 0.44 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 40 JA 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDA20N50F Rev. C2