X-On Electronics has gained recognition as a prominent supplier of FDB045AN08A0 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDB045AN08A0 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDB045AN08A0 ON Semiconductor

FDB045AN08A0 electronic component of ON Semiconductor
FDB045AN08A0 ON Semiconductor
FDB045AN08A0 MOSFETs
FDB045AN08A0  Semiconductors

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See Product Specifications
Part No. FDB045AN08A0
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 75V; 90A; 310W; D2PAK
Datasheet: FDB045AN08A0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.5625 ea
Line Total: USD 4.56 
Availability - 2976
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
427576
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 800
Multiples : 800
800 : USD 2.0375
1600 : USD 2.025
2400 : USD 2.0125

29
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 1
Multiples : 1
1 : USD 9.1344
10 : USD 6.1602
30 : USD 5.6186
100 : USD 5.167

2976
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 4.5625
10 : USD 2.9785
25 : USD 2.684
100 : USD 2.156
500 : USD 2.145
800 : USD 1.98

21
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 4.242
5 : USD 3.766
6 : USD 3.262
15 : USD 3.08

776
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 800
Multiples : 800
800 : USD 2.1125

   
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
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We are delighted to provide the FDB045AN08A0 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDB045AN08A0 and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDB045AN08A0 N-Channel PowerTrench MOSFET FDB045AN08A0 N-Channel PowerTrench MOSFET 75 V, 80 A, 4.5 m Features R = 3.9 m ( Typ.) V = 10 V, I = 80 A DS(on) GS D Q = 92 nC ( Typ.) V = 10 V G(tot) GS Applications Low Miller Charge Synchronous Rectification for ATX / Server / Telecom PSU Low Q Body Diode rr Battery Protection Circuit UIS Capability (Single Pulse and Repetitive Pulse) Motor drives and Uninterruptible Power Supplies Formerly developmental type 82684 D D G G 2 S D -PAK S MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FDB045AN08A0 Units V Drain to Source Voltage 75 V DSS V Gate to Source Voltage 20 V GS Drain Current o 90 A Continuous (T < 137 C, V = 10V) C GS I D o o Continuous (T = 25 C, V = 10V, with R = 43 C/W) 19 A amb GS JA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 600 mJ AS Power dissipation 310 W P D o o Derate above 25 C 2.0 W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case 0.48 C/W JC o R Thermal Resistance Junction to Ambient (Note 2) 62 C/W JA 2 o R 43 C/W Thermal Resistance Junction to Ambient, 1in copper pad area JA Publication Order Number: 2002 Semiconductor Components Industries, LLC. 1 October-2017, Rev. 3 FDB045AN08A0/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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