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FDB86135 N-Channel Shielded Gate PowerTrench MOSFET May 2013 FDB86135 N-Channel Shielded Gate PowerTrench MOSFET 100V, 176A, 3.5m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max R = 3.5m at V = 10V, I = 75A DS(on) GS D incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior Fast Switching Speed switching performance. Low Gate Charge Applications High Performance Trench Technology for Extremely Low R DS(on) DC-DC primary bridge High Power and Current Handling Capability DC-DC Synchronous rectification RoHS Compliant Hot swap D D G 2 D -PAK G S FDB Series S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GSS o Drain Curren - Continuous (Silicon Limited) T = 25 C 176 C o - Continuous( Package Limited) T = 25 C 120 A C I D o - Continuous T = 25 C(Note 1a) 75 C - Pulsed 704 A E Single Pulsed Avalanche Energy (Note 3) 658 mJ AS o - T = 25 C (Note 1a) 227 W C P Power Dissipation D o o - T = 25 C (Note 1b) 2.4 W/ C A o T , T Operating and Storage Temperature Range -55 to +175 C J STG Thermal Characteristics Symbol Parameter Ratings Units R Thermal Resistance, Junction to Case (Note 1) 0.66 JC o C/W R Thermal Resistance, Junction to Ambient (Note 1a) 62.5 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB86135 FDB86135 D2-PAK 330mm 24mm 800 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDB86135 Rev. C1