X-On Electronics has gained recognition as a prominent supplier of FDB86363_F085 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDB86363_F085 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDB86363_F085 ON Semiconductor

FDB86363_F085 electronic component of ON Semiconductor
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Part No.FDB86363_F085
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET N-Channel Power Trench MOSFET
Datasheet: FDB86363_F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.9383 ea
Line Total: USD 4.94 
Availability - 466
Ship by Fri. 29 Nov to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
466
Ship by Fri. 29 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 4.9383
10 : USD 4.1388
30 : USD 3.6523
100 : USD 3.2458

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDB86363_F085 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDB86363_F085 and other electronic components in the MOSFETs category and beyond.

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MOSFET - POWERTRENCH , N-Channel 80 V, 110 A, 2.4 m FDB86363-F085 Features Typical R = 2.0 m at V = 10 V, I = 80 A DS(on) GS D www.onsemi.com Typical Q = 131 nC at V = 10 V, I = 80 A g(tot) GS D UIS Capability NChannel AECQ101 Qualified and PPAP Capable (Pin 2) This Device is PbFree, Halide Free and is RoHS Compliant D Applications Automotive Engine Control Power Train Management G Solenoid and Motor Drivers (Pin 1) Integrated Starter/Alternator S (Pin 3) Primary Switch for 12 V Systems D 2 2 1 G S 3 2 D PAK3 (TO263, 3LEAD) CASE 418AJ PIN CONFIGURATION Position Designation Pin 1 Gate Pin 2 / Tab Drain Pin 3 Source MARKING DIAGRAM Y&Z&3&K FDB86363 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FDB86363 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: January, 2020 Rev. 4 FDB86363F085/DFDB86363F085 MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise noted) J Symbol Parameter Ratings Units V DraintoSource Voltage 80 V DSS V GatetoSource Voltage 20 V GS I A Drain Current Continuous (V = 10 V) (Note 1) T = 25C 110 D GS C Pulsed T = 25C See Figure 4 C E Single Pulse Avalanche Energy (Note 2) 512 mJ AS P Power Dissipation 300 W D Derate Above 25C 2.0 W/C TJ, T Operating and Storage Temperature 55 to +175 C STG RJC Thermal Resistance, Junction to Case 0.5 C/W RJA Maximum Thermal Resistance, Junction to Ambient (Note 3) 43 C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting T = 25C, L = 0.25 mH, I = 64 A, V = 80 V during inductor charging and V = 0 V during time in avalanche. J AS DD DD 3. RJA is the sum of the junctiontocase and casetoambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design, while R is determined by the board design. The maximum rating JA 2 presented here is based on mounting on a 1 in pad of 2 oz copper. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Shipping FDB86363 FDB86363F085 D2PAK (TO263) 800 units / Tape & Reel (PbFree/Halide Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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