MOSFET - POWERTRENCH N-Channel 80 V, 300 A, 1.4 m FDBL86361-F085 Features www.onsemi.com Typical R = 1.1 m at V = 10 V, I = 80 A DS(on) GS D Typical Q = 172 nC at V = 10 V, I = 80 A g(tot) GS D D UIS Capability AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant Applications G Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers S Integrated Starter/Alternator NChannel Primary Switch for 12 V Systems MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) J Symbol Parameter Ratings Unit V V DraintoSource Voltage 80 DSS V V 20 GatetoSource Voltage GS HPSOF8L CASE 100CU A I Drain Current Continuous 300 D (V = 10), T = 25C (Note 1) GS C MARKING DIAGRAM See Figure 4 Pulsed Drain Current, T = 25C C mJ E Single Pulse Avalanche Energy 820 AS (Note 2) W Y&Z&3&K P Power Dissipation 429 D FDBL W/C Derate Above 25C 2.86 86361 C T , T 55 to +175 Operating and Storage Temperature J STG C/W R Thermal Resistance, Junction to Case 0.35 JC C/W R Maximum Thermal Resistance, 43 JA Y = ON Semiconductor Logo Junction to Ambient (Note 3) &Z = Assembly Plant Code Stresses exceeding those listed in the Maximum Ratings table may damage the &3 = Numeric Date Code device. If any of these limits are exceeded, device functionality should not be &K = Lot Code assumed, damage may occur and reliability may be affected. FDBL86361 = Specific Device Code 1. Current is limited by bondwire configuration. 2. Starting T = 25C, L = 0.4 mH, I = 64 A, V = 40 V during inductor charging J AS DD and V = 0 V during time in avalanche. DD ORDERING INFORMATION 3. R is the sum of the junction to case and case to ambient thermal JA resistance, where the case thermal reference is defined as the solder Device Top Mark Package Shipping mounting surface of the drain pins. R is guaranteed by design, while R JC JA is determined by the board design. The maximum rating presented here is FDBL86361 FDBL86361 HPSOF8L 2000 Units/ 2 based on mounting on a 1 in pad of 2oz copper. F085 Tape&Reel *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2019 Rev. 5 FDBL86361F085/DFDBL86361 F085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BV DraintoSource Breakdown Voltage 80 V I = 250 A, V = 0 V DSS D GS I DraintoSource Leakage Current V = 80 V, T = 25C 1 A DSS DS J V = 0 V GS T = 175C (Note 4) 1 mA J I GatetoSource Leakage Current V = 20 V 100 nA GSS GS ON CHARACTERISTICS V Gate to Source Threshold Voltage 2.0 3.0 4.0 V V = V , I = 250 A GS(th) GS DS D R Drain to Source on Resistance I = 80 A, T = 25C 1.1 1.4 m DS(on) D J V = 10 V GS T = 175C (Note 4) 2.4 3.1 m J DYNAMIC CHARACTERISTICS C Input Capacitance V = 40 V, V = 0 V, f = 1 MHz 12800 pF iss DS GS C Output Capacitance 1925 pF oss C Reverse Transfer Capacitance 139 pF rss R Gate Resistance f = 1 MHz 2.7 g Q Total Gate Charge at 10 V V = 0 to 10 V 172 188 nC g(ToT) GS V = 64 V DD Q Threshold Gate Charge 23 27 nC g(th) V = 0 to 2 V GS I = 80 A D Q GatetoSource Gate Charge 51 nC gs Q GatetoDrain Miller Charge 34 nC gd SWITCHING CHARACTERISTICS t TurnOn Time V = 40 V, I = 80 A, 128 ns on DD D V = 10 V, R = 6 GS GEN t TurnOn Delay 42 ns d(on) t Rise Time 73 ns r t TurnOff Delay 87 ns d(off) t Fall Time 48 ns f t TurnOff Time 193 ns off DRAINSOURCE DIODE CHARACTERISTIC V SourcetoDrain Diode Voltage I = 80 A, V = 0 V 1.25 V SD SD GS I = 40 A, V = 0 V 1.2 V SD GS t ReverseRecovery Time I = 80 A, dI /dt = 100 A/ s, 117 136 ns rr F SD V = 64 V DD Q ReverseRecovery Charge 205 269 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production. J www.onsemi.com 2