X-On Electronics has gained recognition as a prominent supplier of ECH8697R-TL-W MOSFETs across the USA, India, Europe, Australia, and various other global locations. ECH8697R-TL-W MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ECH8697R-TL-W ON Semiconductor

ECH8697R-TL-W electronic component of ON Semiconductor
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Part No.ECH8697R-TL-W
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NCH 2.5V COMMON-DRAIN
Datasheet: ECH8697R-TL-W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.459 ea
Line Total: USD 0.46 
Availability - 65
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2931
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4137
10 : USD 0.3584
25 : USD 0.3561
100 : USD 0.3027
250 : USD 0.2996
500 : USD 0.2913
1000 : USD 0.2831
3000 : USD 0.2748

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2721
6000 : USD 0.2633
9000 : USD 0.2454

65
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.459
10 : USD 0.3653
30 : USD 0.3251
100 : USD 0.2754
500 : USD 0.2524
1000 : USD 0.2391

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the ECH8697R-TL-W from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ECH8697R-TL-W and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. ECH8697R Power MOSFET for 1-2 Cells Lithium-ion Battery Protection 24 V, 11.6 m, 10 A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells Lithium-ion Battery applications. V R (on) Max I DSS DS D Max Features 11.6 m 4.5 V Low On-Resistance 12.6 m 4.0 V 2.5 V drive 24 V 10 A 15 m 3.1 V Common-Drain Type 17.5 m 2.5 V ESD Diode-Protected Gate Built-in Gate Protection Resistor Pb-Free, Halogen Free and RoHS compliance ELECTRICAL CONNECTION N-Channel Typical Applications 8 76 5 1-2 cells Lithium-ion Battery Charging and Discharging Switch 1:Source1 SPECIFICATIONS 2:Gate1 3:Source2 ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 4:Gate2 Parameter Symbol Value Unit 5:Drain 6:Drain Drain to Source Voltage V 24 V DSS 7:Drain Gate to Source Voltage V 12.5 V GSS 8:Drain Drain Current (DC) I 10 A D 12 3 4 Drain Current (Pulse) I 60 DP A PW 10 s, duty cycle 1% Power Dissipation MARKING Surface mounted on ceramic substrate P 1.5 D W 2 (1000 mm 0.8 mm) 1 unit Total Dissipation Surface mounted on ceramic substrate P 1.6 W UU T 2 (1000 mm 0.8 mm) LOT No. Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C SOT-28FL / ECH8 Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction to Ambient R 83.3 C/W Surface mounted on ceramic substrate JA 2 (1000 mm 0.8 mm) 1 unit Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : December 2016 - Rev. 3 ECH8697R/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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