ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDC6302P Digital FET, Dual P-Channel Features General Description -25 V, -0.12 A continuous, -0.5 A Peak. These Dual P-Channel logic level enhancement mode field R = 13 V = -2.7 V DS(ON) GS effect transistors are produced using ON Semiconductor s R = 10 V = -4.5 V. DS(ON) GS proprietary, high cell density, DMOS technology. This very Very low level gate drive requirements allowing direct high density process is especially tailored to minimize on- operation in 3V circuits. V < 1.5V. GS(th) state resistance. This device has been designed especially for Gate-Source Zener for ESD ruggedness. low voltage applications as a replacement for digital >6kV Human Body Model transistors in load switchimg applications. Since bias resistors are not required this one P-Channel FET can Replace multiple PNP digital transistors (IMHxA series) with replace several digital transistors with different bias resistors one DMOS FET. like the IMBxA series. TM TM SuperSOT -6 SuperSOT -8 SOIC-16 SO-8 SOT-223 SOT-23 3 4 5 2 1 6 o Absolute Maximum Ratings T = 25 C unless other wise noted A Symbol Parameter FDC6302P Units V Drain-Source Voltage -25 V DSS V Gate-Source Voltage -8 V GSS Drain Current - Continuous -0.12 A I D - Pulsed -0.5 P Maximum Power Dissipation (Note 1a) 0.9 W D (Note 1b) 0.7 T ,T Operating and Storage Temperature Range -55 to 150 C J STG ESD Electrostatic Discharge Rating MIL-STD-883D 6.0 kV Human Body Model (100pf / 1500 Ohm) THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 140 C/W JA R Thermal Resistance, Junction-to-Case (Note 1) 60 C/W JC 1997 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 3 FDC6302P/D