DATA SHEET www.onsemi.com Integrated Load Switch FDC6323L TSOT236 CASE 419BL Description MARKING DIAGRAM These Integrated Load Switches are produced using onsemis proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance and provide superior switching performance. These devices are &E&Y &.323&G particularly suited for low voltage high side load switch application where low conduction loss and ease of driving are needed. Features &E = Designates Space V = 0.2 V V = 5 V, I = 1 A, V = 1.5 V to 8 V &Y = Binary Calendar Year Coding Scheme DROP IN L ON/OFF &. = Pin One Dot V = 0.3 V V = 3.3 V, I = 1 A, V = 1.5 V to 8 V DROP IN L ON/OFF 323 = Specific Device Code High Density Cell Design for Extremely Low OnResistance &G = Date Code V Zener Protection for ESD Ruggedness > 6 kV Human ON/OFF Body Model ORDERING INFORMATION SUPERSOT 6 Package Design Using Copper Lead Frame for Device Package Shipping Superior Thermal and Electrical Capabilities FDC6323L TSOT236 3000 / This is a PbFree and Halide Free Device (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification V ,R1 4 3 V , C1 IN OUT Brochure, BRD8011/D. Q2 5 ON/OFF 2 V , C1 OUT Q1 R1, C1 6 1 R1 See Application Circuit Figure 1. V DROP + IN OUT ON/OFF Figure 2. Equivalent Circuit Semiconductor Components Industries, LLC, 1999 1 Publication Order Number: September, 2021 Rev. 7 FDC6323L/DFDC6323L ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Value Unit V Input Voltage Range 38 V IN V On/Off Voltage Range 1.58 V ON/OFF I Load Current V = 0.5V Continuous (Note 1) 1.5 A L DROP Load Current V = 0.5V Pulsed (Note 1, Note 3) 2.5 DROP P Maximum Power Dissipation (Note 2a) 0.7 W D T , T Operating and Storage Temperature Range 55 to 150 C J STG ESD Electrostatic Discharge Rating MILSTD883D Human Body Model (100 pF / 1500 ) 6 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Value Unit R Thermal Resistance, JunctiontoAmbient (Note 2a) 180 C/W JA Thermal Resistance, JunctiontoCase (Note 2) 60 C/W R JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS I Forward Leakage Current V = 8 V, V = 0 V 1 A FL IN ON/OFF I Reverse Leakage Current V = 8 V, V = 0 V 1 A RL IN ON/OFF ON CHARACTERISTICS (Note 3) V Input Voltage 3 8 V IN V On/Off Voltage 1.5 8 V ON/OFF V Conduction Voltage Drop 1 A V = 5 V, V = 3.3 V 0.145 0.2 V DROP IN ON/OFF V = 3.3 V, V = 3.3 V 0.178 0.3 IN ON/OFF I Load Current V = 0.2 V, V = 5 V, 1 A L DROP IN V = 3.3 V ON/OFF V = 0.3 V, V = 3.3 V, 1 DROP IN V = 3.3 V ON/OFF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. V = 8 V, V = 8 V, V = 0.5 V, T = 25C IN ON/OFF DROP A 2. R is the sum of the junctiontocase and casetoambient thermal resistance where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board design. JC CA T T T T 2 J A J A P (t) I (t) R D DS(ON) T D J R (t) R R (t) JA JC CA Typical R for single device operation using the board layouts shown below on FR 4 PCB in a still air environment: CA a) 180C/W when mounted on a 2oz minimum copper pad. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2