Integrated Load Switch FDC6329L Description This device is particularly suited for compact power management in portable electronic equipment where 2.5 V to 8 V input and 2.5 A output current capability are needed. This load switch integrates www.onsemi.com asmall NChannel power MOSFET (Q1) which drives a large TM PChannel power MOSFET (Q2) in one tiny SUPERSOT 6 package. Features V = 0.20 V V = 5 V, I = 2.8 A, R = 0.07 DROP IN L (on) TSOT236 V = 0.20 V V = 2.5 V, I = 1.9 A, R = 0.105 DROP IN L (on) CASE 419BL Control MOSFET (Q1) Includes Zener Protection for ESD Ruggedness (> 6 kV Human Body Model) MARKING DIAGRAM High Performance Trench Technology for Extremely Low OnResistance &E&Y SUPERSOT6 Package Design Using Copper Lead Frame for &.329&G Superior Thermal and Electrical Capabilities This is a PbFree and Halide Free Device &E = Designates Space &Y = Binary Calendar Year Coding Scheme &. = Pin One Dot V ,R1 4 3 V , C1 IN OUT 329 = Specific Device Code &G = Date Code Q2 5 ON/OFF 2 V , C1 OUT ORDERING INFORMATION Q1 Device Package Shipping FDC6329L TSOT236 3000 / R1, C1 6 R2 1 (PbFree) Tape & Reel For information on tape and reel specifications, See Application Circuit (Figure 3) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Figure 1. Brochure, BRD8011/D. V DROP + IN OUT ON/OFF Figure 2. Equivalent Circuit Semiconductor Components Industries, LLC, 1998 1 Publication Order Number: June, 2021 Rev. 4 FDC6329L/DFDC6329L ABSOLUTE MAXIMUM RATINGS T = 25C unless otherwise noted A Symbol Parameter Value Unit V Input Voltage Range (Note 1) 2.58 V IN V On/Off Voltage Range 1.58 V ON/OFF I Load Current Continuous (Note 2) 2.5 A L Load Current Pulsed 10 P Maximum Power Dissipation (Note 2) 0.7 W D T , T Operating and Storage Temperature Range 55 to 150 C J STG ESD Electrostatic Discharge Rating MILSTD883D Human Body Model (100 pF / 1500 ) 6 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS T = 25C unless otherwise noted A Symbol Parameter Value Unit R Thermal Resistance, JunctiontoAmbient (Note 2) 180 C/W JA Thermal Resistance, JunctiontoCase (Note 2) 60 C/W R JC ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted A Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS I Forward Leakage Current V = 8 V, V = 0 V 1 A FL IN ON/OFF ON CHARACTERISTICS (Note 3) V Conduction Voltage V = 5 V, V = 3.3 V, I = 2.8 A 0.12 0.2 V DROP IN ON/OFF L V = 2.5 V, V = 3.3 V, I = 1.9 A 0.14 0.2 IN ON/OFF L R Q Static OnResistance V = 5 V, I = 2.5 A 0.047 0.07 DS(on) 2 GS D V = 2.5 V, I = 2.0 A 0.073 0.105 GS D I Load Current V = 0.2 V, V = 5 V, V = 3.3 V 2.8 A L DROP IN ON/OFF V = 0.2 V, V = 2.5 V, V = 3.3 V 1.9 DROP IN ON/OFF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. Range of V can be up to 8 V, but R and R must be scaled such that V of Q2 does not exceed 8 V. in 1 2 GS 2. R is the sum of the junctiontocase and casetoambient thermal resistance where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board design. JC CA 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2