Ordering number : ENA0981B ECH8654 P-Channel Power MOSFET ECH8654 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --20 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--20V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --0.4 --1.3 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--3A 4.9 8.3 S DS D R (on)1 I =--3A, V =--4.5V 29 38 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--1.5A, V =--2.5V 41 58 m DS D GS R (on)3 I =--0.5A, V =--1.8V 64 98 m DS D GS Input Capacitance Ciss 960 pF Output Capacitance Coss V =--10V, f=1MHz 180 pF DS Reverse Transfer Capacitance Crss 140 pF Turn-ON Delay Time t (on) 14 ns d Rise Time t 55 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 92 ns d Fall Time t 68 ns f Total Gate Charge Qg 11 nC Gate-to-Source Charge Qgs V =--10V, V =--4.5V, I =--5A 2.0 nC DS GS D Gate-to-Drain Miller Charge Qgd 2.8 nC Diode Forward Voltage V I =--5A, V =0V --0.82 --1.2 V SD S GS Switching Time Test Circuit V V = --10V DD IN 0V --4V I = --3A D V IN R =3.33 L D V OUT PW=10 s D.C.1% G ECH8654 P.G 50 S Ordering Information Device Package Shipping memo ECH8654-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free No. A0981-2/7