X-On Electronics has gained recognition as a prominent supplier of ECH8661-TL-H MOSFETs across the USA, India, Europe, Australia, and various other global locations. ECH8661-TL-H MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ECH8661-TL-H ON Semiconductor

ECH8661-TL-H electronic component of ON Semiconductor
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See Product Specifications
Part No.ECH8661-TL-H
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET SWITCHING DEVICE
Datasheet: ECH8661-TL-H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9383 ea
Line Total: USD 0.94 
Availability - 16917
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
16917
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9383
10 : USD 0.7777
100 : USD 0.5775
500 : USD 0.4785
1000 : USD 0.4466
3000 : USD 0.4279
6000 : USD 0.4169

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ECH8661-TL-H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ECH8661-TL-H and other electronic components in the MOSFETs category and beyond.

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Ordering number : ENA1777A ECH8661 Power MOSFET ECH8661 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max N-channel Drain-to-Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =3.5A 3.7 S DS D R (on)1 I =3.5A, V =10V 18 24 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =2A, V =4.5V 29 41 m DS D GS R (on)3 I =2A, V =4V 39 55 m DS D GS Input Capacitance Ciss V =10V, f=1MHz 710 pF DS Output Capacitance Coss V =10V, f=1MHz 120 pF DS Reverse Transfer Capacitance Crss V =10V, f=1MHz 72 pF DS Turn-ON Delay Time t (on) 10 ns d Rise Time t 25 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 43 ns d Fall Time t 25 ns f Total Gate Charge Qg 11.8 nC Gate-to-Source Charge Qgs V =15V, V =10V, I =7A 2.4 nC DS GS D Gate-to-Drain Miller Charge Qgd 2.0 nC Diode Forward Voltage V I =7A, V =0V 0.79 1.2 V SD S GS P-channel Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--2.5A 5.2 S DS D R (on)1 I =--2.5A, V =--10V 30 39 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--1.5A, V =--4.5V 55 77 m DS D GS R (on)3 I =--1.5A, V =--4V 58 82 m DS D GS Input Capacitance Ciss 600 pF Output Capacitance Coss V =--10V, f=1MHz 145 pF DS Reverse Transfer Capacitance Crss 110 pF Turn-ON Delay Time t (on) 7.2 ns d Rise Time t 23 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 63 ns d Fall Time t 42 ns f Total Gate Charge Qg 13 nC Gate-to-Source Charge Qgs V =--15V, V =--10V, I =--5.5A 1.8 nC DS GS D Gate-to-Drain Miller Charge Qgd 3.2 nC Diode Forward Voltage V I =--5.5A, V =0V --0.82 --1.2 V SD S GS No. A1777-2/9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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