Ordering number : ENA1174A ECH8601M N-Channel Power MOSFET ECH8601M Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 24 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =20V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 0.5 1.3 V GS DS D Forward Transfer Admittance yfs V =10V, I =4A 3.1 5.3 S DS D R (on)1 I =4A, V =4.5V 13.5 17 23 m DS D GS R (on)2 I =4A, V =4.0V 14 18 24 m DS D GS Static Drain-to-Source On-State Resistance R (on)3 I =4A, V =3.1V 14.5 20 30 m DS D GS R (on)4 I =2A, V =2.5V 16 24 35 m DS D GS Turn-ON Delay Time t (on) 300 ns d Rise Time t 1000 ns r See speci ed Test Circuit. Turn-OFF Delay Time t(off) 3000ns d Fall Time t 1800 ns f Total Gate Charge Qg 7.5 nC Gate-to-Source Charge Qgs V =10V, V =4.5V, I =8A 1.5 nC DS GS D Gate-to-Drain Miller Charge Qgd 2.0 nC Diode Forward Voltage V I =8A, V =0V 0.8 1.2 V SD S GS Switching Time Test Circuit V V =10V DD IN 4V 0V I =4A D V IN R =2.5 L D V OUT PW=10s D.C.1% Rg G ECH8601M P.G S 50 Rg=1k Ordering Information Device Package Shipping memo ECH8601M-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1174-2/7