TSM2N7000KCTA3 Taiwan Semiconductor

TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Source V (V) R () I (mA) DS DS(on) D 2. Gate 3. Drain 5 V = 10V 100 GS 60 5.5 V = 5V 100 GS Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7000KCT B0 TO-92 1Kpcs / Bulk TSM2N7000KCT A3 TO-92 2Kpcs / Ammo N-Channel MOSFET o Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS Continuous T =25C I 300 A D Drain Current mA Pulsed I 700 DM Continuous T =25C I 300 A DR Drain Reverse Current mA Pulsed I 700 DMR Maximum Power Dissipation P 400 mW D o Operating Junction Temperature T +150 C J o Operating Junction and Storage Temperature Range T , T -55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit S Lead Temperature (1/8 from case) T 10 L Junction to Ambient Thermal Resistance (PCB mounted) R 357 C/W JA Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 5 sec. 1/6 Version: B12 TSM2N7000K 60V N-Channel MOSFET o Electrical Specifications (Ta = 25 C, unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 10A BV 60 -- -- GS D DSS V Gate Threshold Voltage V = V , I = 250A V 1.0 -- 2.5 V DS GS D GS(TH) Gate Body Leakage V = 20V, V = 0V I -- -- 10 uA GS DS GSS Zero Gate Voltage Drain Current V = 60V, V = 0V I -- -- 1.0 DS GS DSS uA V = 10V, I = 100mA -- 3 5 GS D Drain-Source On-State Resistance R DS(ON) V = 5V, I = 100mA -- 3.6 5.5 GS D Forward Transconductance V = 10V, I = 200mA g 100 -- -- mS DS D fs Diode Forward Voltage I = 300mA, V = 0V V -- 0.9 1.2 V S GS SD b Dynamic V = 10V, I = 250mA, DS D Total Gate Charge Q -- 0.4 -- nC g V = 4.5V GS Input Capacitance C -- 7.32 -- iss V = 25V, V = 0V, DS GS pF Output Capacitance C -- 3.42 -- oss f = 1.0MHz Reverse Transfer Capacitance C -- 7.63 -- rss c Switching Turn-On Delay Time t -- 25 -- V = 30V, R = 10 d(on) DD G nS I = 100mA, V = 10V, Turn-Off Delay Time t -- 35 -- D GEN d(off) Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/6 Version: B12