TSM3424 30V N-Channel MOSFET SOT-26 Pin Definition: PRODUCT SUMMARY 1. Drain 6. Drain V (V) R (m) I (A) 2. Drain 5, Drain DS DS(on) D 3. Gate 4. Source 30 V = 10V 6.7 GS 30 42 V = 4.5V 5.7 GS Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Package Packing TSM3424CX6 RF SOT-26 3Kpcs / 7 Reel N-Channel MOSFET TSM3424CX6 RFG SOT-26 3Kpcs / 7 Reel Note: G denote for Halogen Free Product o Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 6.7 A D Pulsed Drain Current I 30 A DM a,b Continuous Source Current (Diode Conduction) I 1.7 A S o Ta = 25 C 2.0 Maximum Power Dissipation P W D o Ta = 75 C 1.3 o Operating Junction Temperature T +150 C J o Operating Junction and Storage Temperature Range T , T -55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit o C/W Junction to Case Thermal Resistance R 30 JC o Junction to Ambient Thermal Resistance (PCB mounted) R 80 C/W JA Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 10 sec. 1/6 Version: C11 Not Recommended TSM3424CX6 RF TSM3424 30V N-Channel MOSFET o Electrical Specifications (Ta = 25 C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit a Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 30 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 1 1.4 3 V DS GS D GS(TH) Gate Body Leakage V = 20V, V = 0V I -- -- 100 A GS DS GSS Zero Gate Voltage Drain Current V = 24V, V = 0V I -- -- 1.0 A DS GS DSS On-State Drain Current V 5V, V = 10V I 30 -- -- A DS GS D(ON) V = 10V, I = 6.7A -- 23 30 GS D Drain-Source On-State Resistance R m DS(ON) V = 4.5V, I = 5.7A -- 32 42 GS D Forward Transconductance V = 5V, I = 5.0A g -- 14 -- S DS D fs Diode Forward Voltage I = 1.7A, V = 0V V -- 0.76 1 V S GS SD b Dynamic Total Gate Charge Q -- 4.52 -- g V = 15V, I = 6.7A, DS D nC Gate-Source Charge Q -- 1.24 -- gs V = 10V GS Gate-Drain Charge Q -- 1.68 -- gd Input Capacitance C -- 400.96 -- iss V = 15V, V = 0V, DS GS pF Output Capacitance C -- 100.47 -- oss f = 1.0MHz Reverse Transfer Capacitance C -- 71.82 -- rss c Switching Turn-On Delay Time t -- 7.42 -- d(on) V = 15V, R = 2.2, DD L Turn-On Rise Time t -- 3.41 -- r I = 1A, V = 10V, nS D GEN Turn-Off Delay Time t -- 20.4 -- d(off) R = 6 G Turn-Off Fall Time t -- 3.01 -- f Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. 2/6 Version: C11 Not Recommended TSM3424CX6 RF