TSM35N10 100V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY Pin Definition: (DPAK) 1. Gate V (V) R (m) I (A) DS DS(on) D 2. Drain 3. Source 100 37 V =10V 32 GS Features Block Diagram Advanced Trench Technology Low R 37m (Max.) DS(ON) Low gate charge typical 34nC (Typ.) Low Crss typical 45pF (Typ.) Ordering Information Part No. Package Packing TSM35N10CP ROG TO-252 2.5Kpcs / 13 Reel Note: G denote for Halogen Free Product N-Channel MOSFET o Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 100 V DS Gate-Source Voltage V 20 V GS T =25C 32 C T =70C 26 C I A Continuous Drain Current D T =25C 5 A T =70C 4 A Drain Current-Pulsed Note 1 I 70 A DM Avalanche Current, L=0.1mH I , I 35 A AS AR Avalanche Energy, L=0.1mH E , E 61 mJ AS AR T =25C 83.3 C T =70C 53.3 C Maximum Power Dissipation P W D T =25C 2 A T =70C 1.3 A Storage Temperature Range T -55 to +150 C STG Operating Junction Temperature Range T -55 to +150 C J * Limited by maximum junction temperature Thermal Performance Parameter Symbol Limit Unit o Thermal Resistance - Junction to Case R 1.5 C/W JC o Thermal Resistance - Junction to Ambient R 62 C/W JA 1/6 Version: B13 TSM35N10 100V N-Channel Power MOSFET o Electrical Specifications (Ta = 25 C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250uA BV 100 -- -- V GS D DSS V = 10V, I = 10A R -- 30 37 m GS D DS(ON) Drain-Source On-State Resistance V = 4.5V, I = 10A R -- 32 42 m GS D DS(ON) Gate Threshold Voltage V = V , I = 250uA V 1 2 3 V DS GS D GS(TH) Zero Gate Voltage Drain Current V = 100V, V = 0V I -- -- 1 uA DS GS DSS Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS Dynamic Total Gate Charge Q -- 34 -- g V = 50V, I = 10A, DS D nC Gate-Source Charge Q -- 6 -- gs V = 10V GS Gate-Drain Charge Q -- 9 -- gd Input Capacitance C -- 1598 -- iss V = 30V, V = 0V, DS GS pF Output Capacitance C -- 132 -- oss f = 1.0MHz Reverse Transfer Capacitance C -- 45 -- rss Switching Turn-On Delay Time t -- 7 -- d(on) Turn-On Rise Time t -- -- 7 V = 10V, V = 50V, r GS DS nS R = 3 Turn-Off Delay Time t -- 29 -- G d(off) Turn-Off Fall Time t -- 7 -- f Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward V =0V, I =10A V -- 0.7 -- V GS S SD Voltage o Reverse Recovery Time t -- 32 -- nS I = 10A, T =25 C fr S J dI/dt = 500A/us Reverse Recovery Charge Q -- 200 -- nC fr Notes: 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal JA reference is defined as the solder mounting surface of the drain pins. R is guaranteed by design while R JC CA is determined by the user s board design. R shown below for single device operation on FR-4 in still air JA 2/6 Version: B13