BF2040... Silicon N-Channel MOSFET Tetrode For low noise , high gain controlled input stages up to 1GHz Operating voltage 5 V Pb-free (RoHS compliant) package Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Package Pin Configuration Marking BF2040 SOT143 1=S 2=D 3=G2 4=G1 - - NFs BF2040R SOT143R 1=D 2=S 3=G1 4=G2 - - NFs BF2040W SOT343 1=D 2=S 3=G1 4=G2 - - NFs Maximum Ratings Parameter Symbol Value Unit 8 V Drain-source voltage V DS 40 mA Continuous drain current I D 10 Gate 1/ gate 2-source current I G1/2SM 7 V Gate 1 (external biasing) +V G1SE mW Total power dissipation P tot T 76 C, BF2040, BF2040R 200 S T 94 C, BF2040W 200 S C Storage temperature T -55 ... 150 stg 150 Channel temperature T ch Thermal Resistance Parameter Symbol Value Unit 1) K/W Channel - soldering point R thchs BF2040, BF2040R 370 BF2040W 280 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2007-06-01 1BF2040... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 10 - - V Drain-source breakdown voltage V (BR)DS I = 20 A, V = 0 , V = 0 D G1S G2S 6 - 15 Gate1-source breakdown voltage +V (BR)G1SS +I = 10 mA, V = 0 , V = 0 G1S G2S DS 6 - 15 Gate2-source breakdown voltage +V (BR)G2SS +I = 10 mA, V = 0 , V = 0 G2S G1S DS - - 50 nA Gate1-source leakage current +I G1SS V = 5 V, V = 0 , V = 0 G1S G2S DS - - 50 Gate2-source leakage current +I G2SS V = 5 V, V = 0 , V = 0 G2S G1S DS - - 50 A Drain current I DSS V = 5 V, V = 0 , V = 4 V DS G1S G2S - 15 - mA Drain-source current I DSX V = 5 V, V = 4 V, R = 100 k DS G2S G1 Gate1-source pinch-off voltage V 0.3 0.6 - V G1S(p) V = 5 V, V = 4 V, I = 20 A DS G2S D Gate2-source pinch-off voltage V 0.3 0.7 - G2S(p) V = 5 V, I = 20 A DS D 2007-06-01 2