MRF141 Advanced Semiconductor

MRF141 RF FIELD-EFFECT POWER TRANSISTOR PACKAGE STYLE .500 4L FLG DESCRIPTION: The is a N-Channel MRF141 .112x45 L A Enhancement-Mode MOSFET S .125 NOM. D FULL R RF Power Transistor Designed for 175 MHz 150 W Transmitter and C B Amplifier Applications. S G E D F G H MAXIMUM RATINGS K J I I 16 A D MINIMUM MAXIMUM DIM inches / mm inches / mm V 65 V DSS A .220 / 5.59 .230 / 5.84 .125 / 3.18 B V 40 V GS .245 / 6.22 .255 / 6.48 C .720 / 18.28 .7.30 / 18.54 D P 300 W T = 25 C .125 / 3.18 C E DISS .970 / 24.64 .980 / 24.89 F G .495 / 12.57 .505 / 12.83 T -65 C to +200 C J .003 / 0.08 .007 / 0.18 H .090 / 2.29 .110 / 2.79 I -65 C to +200 C T STG .150 / 3.81 .175 / 4.45 J .280 / 7.11 K 0.6 C/W L .980 / 24.89 1.050 / 26.67 JC CHARACTERISTICS T = 25 C C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS I = 100 mA 65 BV V DSS D V = 28 V V = 0 V 5.0 I mA DSS DS GS I V = 0 V V = 20 V 1.0 DS GS A GSS V I = 100 mA V = 10 V 1.0 5.0 V D DS GS(th) V I = 10 A V = 10 V 5.0 V DS(on) D GS I = 5.0 A V = 10 V 5.0 g mhos fs D DS C 350 iss C V = 28 V V = 0 V f = 1.0 MHz 420 pF DS GS oss C rss 40 16 20 V = 28 V I = 250 mA P = 150 W (PEP) DD DQ out G dB ps 10 f = 175 MHz 40 % V = 28 V I = 250 mA P = 150 W (PEP) DD DQ out IMD dB -30 -28 (d3) I = 5.95 A f = 30 to 30.001 MHz D(max) IMD dB (d11) -60 V = 28 V I = 250 mA P = 150 W (PEP) DD DQ out NO DEGRADATION IN OUTPUT POWER f =30 to 30.001 MHz V = 30:1 1 SWR A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004 1/4 Specifications are subject to change without notice.MRF141 ERROR REFERENCE SOURCE NOT FOUND. A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004 2/4 Specifications are subject to change without notice.