X-On Electronics has gained recognition as a prominent supplier of MRFE6VP8600HR5 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRFE6VP8600HR5 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRFE6VP8600HR5 NXP

MRFE6VP8600HR5 electronic component of NXP
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Part No.MRFE6VP8600HR5
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Transistors RF MOSFET VHV6 600W NI1230H 50V
Datasheet: MRFE6VP8600HR5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 308.099 ea
Line Total: USD 308.1 
Availability - 2
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 308.099
10 : USD 300.278
25 : USD 298.826
50 : USD 294.162
100 : USD 292.083
250 : USD 292.006
500 : USD 291.896
1000 : USD 291.643
2500 : USD 291.324

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Pd - Power Dissipation
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Brand
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Factory Pack Quantity :
Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the MRFE6VP8600HR5 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRFE6VP8600HR5 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRFE6VP8600H FreescaleSemiconductor Rev. 1, 9/2011 Technical Data RFPowerLDMOSTransistors MRFE6VP8600HR6 HighRuggedness N--Channel MRFE6VP8600HR5 Enhancement--ModeLateral MOSFETs MRFE6VP8600HSR6 Optimizedforbroadbandoperationfrom470to860MHz. Devicehas an integrated input matching network for better power distribution. These devices MRFE6VP8600HSR5 areideally suitedforuseinanalogordigitaltelevisiontransmitters. Typical Narrowband Performance: V =50Volts,I = 1400 mA, DD DQ Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB 0.01% 470--860MHz,600W,50V Probability onCCDF.ACPR measured in7.61MHz Signal Bandwidth LDMOSBROADBAND 4MHz Offset withanIntegrationBandwidthof 4kHz. RFPOWERTRANSISTORS P out f G ACPR IRL ps D SignalType (W) (MHz) (dB) (%) (dBc) (dB) DVB--T(8k OFDM) 125 Avg. 860 19.3 30.0 --60.5 --12 Typical Pulsed Broadband Performance: V =50Volts,I = 1400 mA, DD DQ Pulsed Width = 100sec, Duty Cycle= 10% P f G out ps D SignalType (W) (MHz) (dB) (%) CASE375D--05,STYLE1 Pulsed 600 Peak 470 19.3 47.1 NI--1230 650 20.0 53.1 MRFE6VP8600HR6 860 18.8 48.9 Features Capable of Handling >65:1 VSWR through all Phase Angles 50 Vdc, 860MHz, DVB--T (8k OFDM) 240Watts Avg. Output Power (3dB Input Overdrivefrom RatedP ) out CASE375E--04,STYLE1 Exceptional Efficiency for Class AB Analog or Digital Television Operation NI--1230S Full Performanceacross CompleteUHF TV Spectrum, 470--860MHz MRFE6VP8600HSR6 Capable of 600 Watt CW Output Power with Adequate Thermal Management PARTSAREPUSH--PULL IntegratedInput Matching ExtendedNegativeGate--Source VoltageRangeof --6.0V to+10V Improves Class C Performance, e.g. inaDoherty PeakingStage Enables Fast, Easy and Complete Shutdown of the Amplifier Characterizedfrom 20V to50V for ExtendedOperatingRangefor use withDrainModulation Gate1 Drain1 31 Excellent Thermal Characteristics RoHSCompliant In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. Gate242 Drain2 R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. Table1.MaximumRatings (Top View) Rating Symbol Value Unit Note: The backside of the package is the Drain--Source Voltage V --0.5, +130 Vdc DSS source terminalforthe transistor. Gate--Source Voltage V --6.0, +10 Vdc GS Storage Temperature Range T --65 to +150 C Figure1.PinConnections stg Case Operating Temperature T 150 C C TotalDevice Dissipation T =25C P 1052 W C D Derate above 25C 5.26 W/C (1,2) Operating Junction Temperature T 225 C J 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at Table2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit (3) ThermalResistance, Junction to Case R 0.19 C/W JC Case Temperature 74C, 125 W CW, 50 V, 1400 mA, 860 MHz Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2 (2001--4000 V) Machine Model(perEIA/JESD22--A115) B (201--400V) Charge Device Model(perJESD22--C101) IV (>1000 V) Table4.ElectricalCharacteristics (T =25Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 130 140 Vdc (BR)DSS (V =0Vdc,I =100mA) GS D Zero Gate Voltage Drain Leakage Current I 5 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 20 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (4) Gate Threshold Voltage V 1.5 2.07 2.5 Vdc GS(th) (V =10Vdc,I =980Adc) DS D (5) Gate Quiescent Voltage V 2.1 2.65 3.1 Vdc GS(Q) (V =50Vdc,I =1400 mAdc, Measured in FunctionalTest) DD D (4) Drain--Source On--Voltage V 0.24 Vdc DS(on) (V =10Vdc,I =2Adc) GS D Forward Transconductance g 15.6 S fs (V =10Vdc,I =20Adc) DS D (4) DynamicCharacteristics (6) Reverse TransferCapacitance C 1.49 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS (6) Output Capacitance C 79.9 pF oss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS (7) Input Capacitance C 264 pF iss (V =50Vdc,V =0Vdc 30 mV(rms)ac 1 MHz) DS GS (5) FunctionalTests (In Freescale Narrowband Test Fixture, 50 ohm system)V =50Vdc,I =1400 mA, P =125W Avg., f =860MHz, DD DQ out DVB--T(8kOFDM)SingleChannel.ACPRmeasuredin7.61MHzSignalBandwidth 4MHzOffsetwithanIntegration Bandwidthof 4kHz. PowerGain G 18.0 19.3 21.0 dB ps Drain Efficiency 29.0 30.0 % D Adjacent ChannelPowerRatio ACPR --60.5 --58.5 dBc Input Return Loss IRL --12 --9 dB 1. MTTFcalculatoravailable at

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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NXP SEMI
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