DocumentNumber:MRFG35010AN FreescaleSemiconductor Rev. 4, 8/2013 Technical Data GalliumArsenidepHEMT RF PowerFieldEffect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from500to5000MHz.DeviceisunmatchedandissuitableforuseinClassAB customer premise equipment (CPE) applications. Typical Single--Carrier W--CDMA Performance: V =12Vdc,I = 130 mA, DD DQ 3.84 MHz Channel Bandwidth, Input Signal PAR = 8.5 dB 0.01% 500--5000MHz,9W,12V Probability on CCDF. POWERFET GaAspHEMT Frequency P G ACPR IRL out ps D (MHz) (W) (dB) (dBc) (%) (dB) 750 1 14.5 --44.0 24.0 --15 2140 1 13.0 --43.0 25.0 --14 2650 1 11.5 --43.0 30.0 --15 Features 9 Watts P1dB 3550 MHz, CW Excellent Phase Linearity and Group Delay Characteristics PLD--1.5 High Efficiency and High Linearity PLASTIC In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13--inch Reel. Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 15 Vdc DSS Gate--Source Voltage V --5 Vdc GS RFInput Power P 33 dBm in Storage Temperature Range T --65 to +150 C stg (1) ChannelTemperature T 175 C ch Table2.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 6.5 C/W JC Case Temperature 77C, 1 W CW Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2 Machine Model(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) IV Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDEC J--STD--020 3 260 C 1. Forreliable operation, the operating channeltemperature should not exceed 150 C. 2. Referto AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table5.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Saturated Drain Current I 2.9 Adc DSS (V =3.5Vdc,V =0Vdc) DS GS Off State Leakage Current I <1 100 Adc GSS (V =--0.4Vdc,V =0Vdc) GS DS Off State Drain Current I 0.1 1 mAdc DSO (V =12Vdc,V =--2.2Vdc) DS GS Off State Current I 2 15 mAdc DSX (V =28.5 Vdc, V =--2.5Vdc) DS GS Gate--Source Cut--off Voltage V --1.2 --1.0 --0.7 Vdc GS(th) (V =3.5Vdc,I =15mA) DS DS Quiescent Gate Voltage V --1.2 --0.95 --0.7 Vdc GS(Q) (V =12Vdc,I =180 mA) DS DQ FunctionalTests(In Freescale Test Fixture, 50 ohm system)V =12Vdc,I = 130 mA, P =1 W Avg., f =3550 MHz, Single--Carrier DD DQ out W--CDMA, 3.84 MHz ChannelBandwidth Carrier. ACPR measured in 3.84 MHz ChannelBandwidth 5MHzOffset. PAR =8.5 dB 0.01%Probability on CCDF. PowerGain G 9 10 dB ps Drain Efficiency 23 25 % D Adjacent ChannelPowerRatio ACPR --43 --40 dBc TypicalRFPerformance (In Freescale Test Fixture, 50 hm system)V =12Vdc,I =130 mA, f =3550 MHz DD DQ Output Power, 1 dB Compression Point, CW P1dB 9 W MRFG35010ANT1 RF DeviceData Freescale Semiconductor, Inc. 2