X-On Electronics has gained recognition as a prominent supplier of BF510,215 RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. BF510,215 RF JFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

BF510,215 NXP

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Part No.	BF510,215
Manufacturer:	NXP
Category:	RF JFET Transistors
Description:	Transistors RF JFET TAPE7 FET-RFSS
Datasheet:	BF510,215 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

BF510,215 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 MOQ : 3000 Multiples : 3000	3000 : USD 5.8319		N/A Obsolete

We are delighted to provide the BF510,215 from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BF510,215 and other electronic components in the RF JFET Transistors category and beyond.

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997NXP Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 DESCRIPTION MARKING CODE Asymmetrical N-channel planar BF510 = S6p epitaxial junction field-effect BF511 = S7p transistors in the miniature plastic BF512 = S8p envelope intended for applications up BF513 = S9p to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios 3 handbook, halfpage (BF511) and mains radios (BF512) or the mixer stage (BF513). d g s PINNING - SOT23 12 1= gate Top view MAM385 2 = drain 3 = source Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Drain-source voltage V max. 20 V DS Drain current (DC or average) I max. 30 mA D Total power dissipation up to T =40 CP max. 250 mW amb tot BF510 511 512 513 Drain current 0.7 2.5 6 10 mA V =10 V V = 0 I 3.0 7.0 12 18 mA DS GS DSS Transfer admittance (common source) V =10 V V =0 f = 1 kHz y 2.5 467mS DS GS fs Feedback capacitance V = 10 V V =0 C typ. 0.3 0.3 pF DS GS rs V = 10 V I =5 mA C typ. 0.3 0.3 pF DS D rs Noise figure at optimum source admittance G =1 mS B = 3 mS f = 100 MHz S S V =10 V V =0 F typ. 1.5 1.5 dB DS GS =10 V I =5 mA F typ. 1.5 1.5 dB V DS D December 1997 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

FR9 may also be referenced as

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FREESCALE SEMICONDUC
Freescale Semiconductor
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NXP (FREESCALE)
NXP / Freescale
NXP SEMI
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Manufacturer NXP NXP
Product Category RF JFET Transistors RF JFET Transistors
Transistor Type Jfet Jfet
Technology Si Si
Transistor Polarity N - Channel N - Channel
Vds - Drain-Source Breakdown Voltage 20 V 20 V
Vgs - Gate-Source Breakdown Voltage 20 V 20 V
Id - Continuous Drain Current 30 mA 30 mA
Maximum Drain Gate Voltage 20 V 20 V
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 250 mW 250 mW
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 23 SOT - 23
Packaging Reel Reel
Configuration Single Single
Package Case SOT - 23 SOT - 23
Product Rf Jfet Rf Jfet
Type Silicon Silicon
Brand Nxp Semiconductors Nxp Semiconductors
Continuous Drain Current 30 mA 30 mA
Drain Source Current At Vgs 0 3 mA 3 mA
Forward Transconductance Min 0.0001 S 0.0001 S
Gate Source Cutoff Voltage 0.8 V 0.8 V
Factory Pack Quantity : 3000 3000
Rohs Mouser Y Y
Height 1 mm 1 mm
Length 3 mm 3 mm
Width 1.4 mm 1.4 mm
Forward Transconductance - Min 0.0001 S 0.0001 S
Gate-Source Cutoff Voltage 0.8 V 0.8 V
Cnhts 8541210000 8541210000
Hts Code 8541210075 8541210075
Mxhts 85412101 85412101
Product Type Rf Jfet Transistors Rf Jfet Transistors
Subcategory Transistors Transistors
Taric 8541210000 8541210000