BF545C,215

BF545A BF545B BF545C N-channel silicon junction field-effect transistors Rev. 4 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Low leakage level (typ. 500 fA) High gain Low cut-off voltage (max. 2.2 V for BF545A). 1.3 Applications Impedance converters in e.g. electret microphones and infra-red detectors VHF amplifiers in oscillators and mixers. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage - - 30 V DS V gate-source cut-off I =1 A V =15V 0.4 - 7.8 V GSoff D DS voltage I drain current V =0V V =15V DSS GS DS BF545A 2 - 6.5 mA BF545B 6 - 15 mA BF545C 12 - 25 mA P total power dissipation T 25 C--250mW tot amb y forward transfer V =0V V =15V 3 - 6.5 mS fs GS DS admittance SOT23BF545A BF545B BF545C NXP Semiconductors N-channel silicon junction field-effect transistors) 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 source (s) 3 d 2drain (d) g s 3gate (g) sym054 12 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BF545A - plastic surface mounted package 3 leads SOT23 BF545B BF545C 4. Marking Table 4. Marking 1 Type number Marking code BF545A 20* BF545B 21* BF545C 22* 1 * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. BF545A BF545B BF545C All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 15 September 2011 2 of 16