X-On Electronics has gained recognition as a prominent supplier of BSR57,215 RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. BSR57,215 RF JFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

BSR57,215 NXP

BSR57,215 electronic component of NXP
BSR57,215 NXP
BSR57,215 RF JFET Transistors
BSR57,215  Semiconductors

Images are for reference only
See Product Specifications
Part No. BSR57,215
Manufacturer: NXP
Category: RF JFET Transistors
Description: Transistors RF JFET TAPE7 FET-RFSS
Datasheet: BSR57,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.3002
5 : USD 0.2889
250 : USD 0.2663
1000 : USD 0.2549
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.5395
10 : USD 0.4462
100 : USD 0.2879
1000 : USD 0.2302
3000 : USD 0.2204
9000 : USD 0.2204
24000 : USD 0.2119
45000 : USD 0.2087
99000 : USD 0.2045
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Maximum Drain Gate Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Product
Type
Brand
Drain-Source Current At Vgs 0
Gate-Source Cutoff Voltage
Rds On
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Rds On - Drain-Source Resistance
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSR57,215 from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSR57,215 and other electronic components in the RF JFET Transistors category and beyond.

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BSR56 BSR57 BSR58 N-channel FETs Rev. 3 25 June 2014 Product data sheet 1. Product profile 1.1 General description Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in a plastic microminiature envelope designed for application in thick and thin-film circuits. The transistors are intended for low-power, chopper or switching applications in industrial service. 1.2 Features and benefits Interchangeable drain and source connections Small package 1.3 Applications Low-power, chopper or switching applications Thick and thin-film circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions BSR56 BSR57 BSR58 Unit Min Max Min Max Min Max V drain-source voltage - 40 - 40 - 40 V DS I drain leakage current V = 15 V V =0V ->50 ->20 - >8 mA DSS DS GS T = 40 C mb - - - <100 - <80 mA V gate-source cut-off V = 15 V >4 - >2 - >0.8 - V GSoff DS voltage I = 0.5 nA D <10 - <6 - <4 - V C feedback capacitance V =0 V V = 10 V -<5-<5 - <5pF rs DS GS f = 1 MHz Switching time (V = 10 V V = 0 V) DD GS t turn-off time I = 20 mA V = 10 V - <25 - - - - ns off D GSM I = 10 mA V = 6 V - - - <50 - - ns D GSM I = 5 mA V = 4 V - -- -- <100 ns D GSM P total power dissipation T = 40 C - 250 - 250 - 250 mW tot mb Static characteristics R drain-source on-state V =0V I = 0 A f = 1 kHz - <25 - <40 - <60 DSon GS D resistanceBSR56 BSR57 BSR58 NXP Semiconductors N-channel FETs 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 1drain 3 d 1 2source g s 3gate sym054 12 1 Drain and source are interchangeable. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BSR56 TO-236AB plastic surface-mounted package 3 leads SOT23 BSR57 BSR58 4. Marking Table 4. Marking codes Type number Marking code BSR56 M4P BSR57 M5P BSR58 M6P BSR56 57 58 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 3 25 June 2014 2 of 10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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