Product Information

BSR57,215

BSR57,215 electronic component of NXP

Datasheet
Transistors RF JFET TAPE7 FET-RFSS
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.31
5 : USD 0.2983
250 : USD 0.275
1000 : USD 0.2633
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 0.5572
10 : USD 0.4608
100 : USD 0.2973
1000 : USD 0.2377
3000 : USD 0.2276
9000 : USD 0.2276
24000 : USD 0.2188
45000 : USD 0.2156
99000 : USD 0.2112
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Maximum Drain Gate Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Product
Type
Brand
Drain-Source Current At Vgs 0
Gate-Source Cutoff Voltage
Rds On
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Rds On - Drain-Source Resistance
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BSR56 BSR57 BSR58 N-channel FETs Rev. 3 25 June 2014 Product data sheet 1. Product profile 1.1 General description Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in a plastic microminiature envelope designed for application in thick and thin-film circuits. The transistors are intended for low-power, chopper or switching applications in industrial service. 1.2 Features and benefits Interchangeable drain and source connections Small package 1.3 Applications Low-power, chopper or switching applications Thick and thin-film circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions BSR56 BSR57 BSR58 Unit Min Max Min Max Min Max V drain-source voltage - 40 - 40 - 40 V DS I drain leakage current V = 15 V V =0V ->50 ->20 - >8 mA DSS DS GS T = 40 C mb - - - <100 - <80 mA V gate-source cut-off V = 15 V >4 - >2 - >0.8 - V GSoff DS voltage I = 0.5 nA D <10 - <6 - <4 - V C feedback capacitance V =0 V V = 10 V -<5-<5 - <5pF rs DS GS f = 1 MHz Switching time (V = 10 V V = 0 V) DD GS t turn-off time I = 20 mA V = 10 V - <25 - - - - ns off D GSM I = 10 mA V = 6 V - - - <50 - - ns D GSM I = 5 mA V = 4 V - -- -- <100 ns D GSM P total power dissipation T = 40 C - 250 - 250 - 250 mW tot mb Static characteristics R drain-source on-state V =0V I = 0 A f = 1 kHz - <25 - <40 - <60 DSon GS D resistanceBSR56 BSR57 BSR58 NXP Semiconductors N-channel FETs 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 1drain 3 d 1 2source g s 3gate sym054 12 1 Drain and source are interchangeable. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BSR56 TO-236AB plastic surface-mounted package 3 leads SOT23 BSR57 BSR58 4. Marking Table 4. Marking codes Type number Marking code BSR56 M4P BSR57 M5P BSR58 M6P BSR56 57 58 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 3 25 June 2014 2 of 10

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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