X-On Electronics has gained recognition as a prominent supplier of BSS138BKS,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS138BKS,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS138BKS,115 Nexperia

BSS138BKS,115 electronic component of Nexperia
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See Product Specifications
Part No.BSS138BKS,115
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET 60 V, 320 mA dual N-ch Trench MOSFET
Datasheet: BSS138BKS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0519 ea
Line Total: USD 155.7 
Availability - 20370
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
7246
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1949
Multiples : 1
1949 : USD 0.0667
3000 : USD 0.0617
6000 : USD 0.0567

20370
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0519
9000 : USD 0.0519
12000 : USD 0.0519
30000 : USD 0.0519
45000 : USD 0.0519

387810
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2725
10 : USD 0.1817
100 : USD 0.0954
1000 : USD 0.0828
3000 : USD 0.0575
9000 : USD 0.0541

34920
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0671
9000 : USD 0.0615

7246
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 135
Multiples : 1
135 : USD 0.1258
1000 : USD 0.1076
3000 : USD 0.0701
9000 : USD 0.0662

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS138BKS,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS138BKS,115 and other electronic components in the MOSFETs category and beyond.

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BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1.5 kV Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T =25C - - 60 V DS j V gate-source voltage -20 - 20 V GS 1 I drain current V =10V -- 320mA D GS T =25C amb Static characteristics (per transistor) R drain-source on-state V =10V -1 1.6 DSon GS resistance I =320 mA T =25C D j 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .BSS138BKS Nexperia 60 V, 320 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 6 5 D1 D2 4 2 G1 gate TR1 3D2 drain TR2 G1 G2 4S2 source TR2 132 5 G2 gate TR2 SOT363 (TSSOP6) 6D1 drain TR1 S1 S2 017aaa256 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BSS138BKS TSSOP6 plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking codes 1 Type number Marking code BSS138BKS LG% 1 % = placeholder for manufacturing site code. BSS138BKS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 12 August 2011 2 of 17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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