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This literature is subject to all applicable copyright laws and is not for resale in any manner.BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor May 2013 BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor Features Low On-Resistance D Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed S Low Input/Output Leakage G Ultra-Small Surface Mount Package SOT - 23 Marking : SK Pb Free / RoHS Compliant Green Compound ESD HBM = 2000 V as per JEDEC A114A ESD CDM = 2000 V as per JEDEC C101C (1) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Units V Drain-Source Voltage 50 V DSS V Gate-Source Voltage 12 V GSS Continuous 0.22 I Drain Current A D Pulsed 0.88 T Operating Junction Temperature Range -55 to +150 C J T Storage Temperature Range -55 to +150 C STG Note: 1. These ratings are limiting values above which the serviceability of any semiconductor device maybe impaired. Thermal Characteristics Symbol Parameter Value Units Total Device Dissipation 350 mW P D Derating above T = 25C 2.8 mW/C A (2) R Thermal Resistance, Junction to Ambient 350 C/W JA Note: 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size. Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity SK BSS138K 7 8 mm 3000 units 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com BSS138K Rev. 1.3.0 1