X-On Electronics has gained recognition as a prominent supplier of BSS159N H6327 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS159N H6327 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS159N H6327 Infineon

BSS159N H6327 electronic component of Infineon
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See Product Specifications
Part No.BSS159N H6327
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-KANAL SMALL SIGNAL MOS
Datasheet: BSS159N H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2507 ea
Line Total: USD 1.25 
Availability - 2142
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2142
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2507
50 : USD 0.1994
150 : USD 0.1774
500 : USD 0.1501
3000 : USD 0.1378
6000 : USD 0.1305

5432
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.539
10 : USD 0.4477
100 : USD 0.3047
1000 : USD 0.1716
3000 : USD 0.1573
9000 : USD 0.1375
24000 : USD 0.1353

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the BSS159N H6327 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS159N H6327 and other electronic components in the MOSFETs category and beyond.

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BSS159N SIPMOS Small-Signal-Transistor Product Summary Features V 60 V DS N-channel R 8 DS(on),max Depletion mode I 0.13 A DSS,min dv /dt rated Available with V indicator on reel GS(th) Qualified according to AEC Q101 PG-SOT-23 100% lead-free Halogen-free RoHS compliant 3 1 2 Type Package Pb-free Halogen-free Tape and Reel Information Marking BSS159N PG-SOT-23 Yes Yes H6327: 3000 pcs/reel SGs BSS159NBSS159N PPGG-S-SOTOT-2-233 YeYess YeYess H6906: 3000 pcH6906: 3000 pcss//rreel seel soorrtted in ed in SGSGss 1)1) VV bandsbands GSGS(th(th)) Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C 0.23 A D A T =70 C 0.18 A I T =25 C Pulsed drain current 0.92 D,pulse A I =0.23 A, V =60 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max V Gate source voltage 20 V GS ESD Class JESD22-A114 -HBM 0(<250V) P T =25 C Power dissipation 0.36 W tot A Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Rev. 2.2 page 1 2009-07-29BSS159N Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R minimal footprint - - 350 K/W Thermal characteristics thJA Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =-10 V, I =250 A Drain-source breakdown voltage 60 - - V (BR)DSS GS D V V =3 V, I =26 A Gate threshold voltage -3.5 -2.8 -2.4 GS(th) DS D V =60 V, DS I Drain-source cutoff current - - 0.1 A D(off) V =-10 V, T =25 C GS j V =60 V, DS -- 10 V =-10 V, T =125 C GS j II VV =20 V, 20 V VV =0 V0V GtGate-source leakage currentl k t - - 1010 nAA GSS GS DS I V =0 V, V =10 V On-state drain current 130 - - mA DSS GS DS Drain-source on-state resistance R V =0 V, I =0.07 A - 3.9 8 DS(on) GS D V =10 V, I =0.16 A - 1.7 3.5 GS D V >2 I R , DS D DS(on)max Transconductance g 0.1 0.19 - S fs I =0.16 A D 2) Threshold voltage V sorted in bands GS(th) V V =3 V, I =26 A J -2.6 - -2.4 V GS(th) DS D K -2.75--2.55 L -2.9--2.7 M -3.05--2.85 N -3.2--3 2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 2.2Rev. 2.2 page 2page 2 2009-07-292009-07-29

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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