Product Information

BSS138LT3G

BSS138LT3G electronic component of ON Semiconductor

Datasheet
MOSFET 50V 200mA N-Channel
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.0402 ea
Line Total: USD 402

19400 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 10000  Multiples: 10000
Pack Size: 10000

 More Buying Options & Price Grid(s)

Availability Price Quantity
28735 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

BSS138LT3G
ON Semiconductor

1 : USD 0.4771
50 : USD 0.338
100 : USD 0.2145
250 : USD 0.1755
500 : USD 0.1378

1416 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 20
Multiples : 20

Stock Image

BSS138LT3G
ON Semiconductor

20 : USD 0.0845
100 : USD 0.0754
300 : USD 0.0585
780 : USD 0.0546

19400 - WHS 3


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 10000
Multiples : 10000

Stock Image

BSS138LT3G
ON Semiconductor

10000 : USD 0.0402

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
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Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
Category
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Additional Infomation About Product

The BSS138LT3G MOSFET is a N-Channel, depletion-mode, Field Effect Transistor (FET) manufactured by ON Semiconductor. It is specifically designed for low voltage and low current applications, and is rated to dissipate up to 500mW of power at a maximum drain-source voltage of 50V. Its maximum drain current rating is 200mA, making it suitable for switching and low voltage level shifting applications. Additionally, it features a low on-resistance of 0.17O, making it ideal for power efficiency. Other features of the BSS138LT3G MOSFET include a rise time of 190ns, a fall time of 70ns, and an operating temperature range of -55°C to 125°C.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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