DATA SHEET www.onsemi.com D P-Channel Enhancement Mode Field-Effect Transistor G BSS84 S General Description This P channel enhancement mode field effect transistor is produced using onsemis proprietary, high cell density, DMOS SOT233 technology. This very high density process minimizes onstate CASE 31808 resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to MARKING DIAGRAM 0.52 A. This product is particularly suited to lowvoltage applications 3 requiring a low current highside switch. Drain Features SPM 0.13 A, 50 V, R = 10 at V = 5 V DS(on) GS VoltageControlled PChannel SmallSignal Switch HighDensity Cell Design for Low R 1 2 DS(on) Gate Source High Saturation Current SP = Specific Device Code This Device is PbFree and Halogen Free M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BSS84, SOT233 3000 / BSS84G (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: October, 2021 Rev. 5 BSS84/DBSS84 ABSOLUTE MAXIMUM RATINGS T = 25C unless otherwise noted. A Symbol Parameter Ratings Unit V DrainSource Voltage 50 V DSS V GateSource Voltage 20 GSS I Drain Current Continuous (Note 1) 0.13 A D Drain Current Pulsed (Note 1) 0.52 P Maximum Power Dissipation (Note 1) 0.36 W D Derate Above 25C 2.9 mW/C T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering Purposes, 1/16 from Case 300 L for 10 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS T = 25C unless otherwise noted. A Symbol Parameter Ratings Unit R Thermal Resistance, JunctiontoAmbient (Note 1) 350 C/W JA ELECTRICAL CHARACTERISTICS (Note 2) T = 25C unless otherwise noted. A Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV DrainSource Breakdown Voltage V = 0 V, I = 250 A 50 V DSS GS D Breakdown Voltage Temperature I = 250 A, Referenced to 48 mV/C BV D DSS Coefficient 25C T J I Zero Gate Voltage Drain Current V = 50 V, V = 0 V 15 A DSS DS GS V = 50 V, V = 0 V, 60 DS GS T = 125C J I GateBody Leakage V = 20 V, V = 0 V 10 nA GSS GS DS ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage 0.8 1.7 2 V V = V , I = 1 mA GS(th) DS GS D Gate Threshold Voltage Temperature I = 1 mA, Referenced to 3 mV/C V D GS(th) Coefficient 25C T J R Static DrainSource OnResistance V = 5 V, I = 0.10 A 1.2 10 DS(on) GS D V = 5 V, I = 0.10 A, 1.9 17 GS D T = 125C J I OnState Drain Current V = 5 V, V = 10 V 0.6 A D(on) GS DS g Forward Transconductance V = 25 V, I = 0.10 A 0.05 0.6 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 25 V, V = 0 V, 73 pF iss DS GS f = 1.0 MHz C Output Capacitance 10 oss C Reverse Transfer Capacitance 5 rss R Gate Resistance V = 15 mV, f = 1.0 MHz 9 G GS www.onsemi.com 2