MOSFET - Single N-Channel 60 V, 3.9 m , 103 A NTTFS3D7N06HL Features Max R = 3.9 m at V = 10 V, I = 23 A DS(on) GS D Max R = 5.2 m at V = 4.5 V, I = 18 A DS(on) GS D www.onsemi.com High Performance Technology for Extremely Low R DS(on) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant V R MAX I MAX (BR)DSS DS(ON) D Typical Applications 3.9 m 10 V 60 V 103 A DCDC Buck Converters 5.2 m 4.5 V Point of Load High Efficiency Load Switch and Low Side Switching Oring FET MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS NCHANNEL MOSFET GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 103 A C D Current R (Note 1) JC Steady State Power Dissipation P 83 W D R (Note 1) JC Continuous Drain T = 25C I 16 A A D Current R JA Steady (Notes 1, 2) State Power Dissipation P 2.2 W D WDFN8 R (Notes 1, 2) JA 3.3X3.3, 0.65P CASE 483AW Pulsed Drain Current T = 25C, t = 10 s I 658 A DM A p Operating Junction and Storage Temperature T , T 55 to C J stg MARKING DIAGRAM Range +150 Source Current (Body Diode) I 69 A S Single Pulse DraintoSource Avalanche E 80 mJ S3D7 AS Energy (I = 40 A, L = 0.1 mH) (Note 3) AYWWZZ AV Lead Temperature Soldering Reflow for Sol- T 260 C L dering Purposes (1/8 from case for 10 s) S3D7 = Specific Device Code A = Assembly Plant Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Y = Numeric Year Code assumed, damage may occur and reliability may be affected. WW = Work Week Code ZZ = Assembly Lot Code THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit ORDERING INFORMATION JunctiontoCase Steady State (Note 1) R 1.5 C/W JC Device Package Shipping JunctiontoAmbient Steady State (Note 1) R 54.8 JA NTTFS3D7N06HLTWG WDFN8 3000 / 1. The entire application environment impacts the thermal resistance values shown, (PbFree) Tape & Reel they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using 1 in pad size, 1 oz. Cu pad. For information on tape and reel specifications, 3. E of 80 mJ is based on started T = 25C, I = 40 A, V = 60 V, V = AS J AS DD GS including part orientation and tape sizes, please 10 V. 100% test at I = 40 A. AS refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: October, 2020 Rev. 2 NTTFS3D7N06HL/DNTTFS3D7N06HL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V / I = 250 A, ref to 25C 38.84 mV/C (BR)DSS D Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 A DSS GS J V = 60 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 120 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T I = 120 A, ref to 25C 4.83 mV/C GS(TH) J D DraintoSource On Resistance R V = 10 V, I = 23 A 3.2 3.9 m DS(on) GS D V = 4.5 V, I = 18 A 4.1 5.2 GS D Forward Transconductance g V = 15 V, I = 23 A 170 S FS DS D GateResistance R T = 25C 1 G A CHARGES & CAPACITANCES Input Capacitance C V = 0 V, f = 1 MHz, V = 30 V 2383 pF ISS GS DS Output Capacitance C 400 OSS Reverse Transfer Capacitance C 11.7 RSS Total Gate Charge Q V = 10 V, V = 48 V, I = 11.5 A 32.7 nC G(TOT) GS DS D Total Gate Charge Q V = 4.5 V, V = 48 V, I = 11.5 A 15.1 nC G(TOT) GS DS D GatetoSource Charge Q 5.5 GS GatetoDrain Charge Q 3.3 GD Plateau Voltage V 2.5 V GP SWITCHING CHARACTERISTICS (Note 4) V = 4.5 V, V = 48 V, ns TurnOn Delay Time t 15.6 d(ON) GS DS I = 11.5 A, R = 2.5 D G Rise Time t 8.4 r TurnOff Delay Time t 24.3 d(OFF) Fall Time t 6.2 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.8 1.2 V SD GS J I = 23 A S T = 125C 0.7 J Reverse Recovery Time t V = 0 V, dI /dt = 100 A/ s, 39 ns RR GS S I = 11.5 A S Reverse Recovery Charge Q 28 nC RR Charge Time t V = 0 V, dI /dt = 100 A/ s, 21 ns a GS S I = 11.5 A S Discharge Time t 16 ns b Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Switching characteristics are independent of operating junction temperatures 5. As an Nch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. www.onsemi.com 2