X-On Electronics has gained recognition as a prominent supplier of SIHG018N60E-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHG018N60E-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHG018N60E-GE3 Vishay

SIHG018N60E-GE3 electronic component of Vishay
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Part No.SIHG018N60E-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 600V Vds 30V Vgs TO-247AC
Datasheet: SIHG018N60E-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 15.4152 ea
Line Total: USD 15.42 
Availability - 605
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
605
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 15.4152
10 : USD 15.3817
25 : USD 11.3134
100 : USD 10.8787
1000 : USD 10.8675

   
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We are delighted to provide the SIHG018N60E-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHG018N60E-GE3 and other electronic components in the MOSFETs category and beyond.

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SiHG018N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D th 4 generation E series technology TO-247AC Low figure-of-merit (FOM) R x Q on g Low effective capacitance (C ) o(er) G Reduced switching and conduction losses Avalanche energy rated (UIS) Material categorization: for definitions of compliance S D S please see www.vishay.com/doc 99912 G N-Channel MOSFET APPLICATIONS Server and telecom power supplies PRODUCT SUMMARY Switch mode power supplies (SMPS) V (V) at T max. 650 DS J Power factor correction power supplies (PFC) R typ. () at 25 C V = 10 V 0.021 DS(on) GS Lighting Q max. (nC) 228 g - High-intensity discharge (HID) Q (nC) 65 gs - Fluorescent ballast lighting Q (nC) 48 gd Industrial Configuration Single - Welding - Induction heating - Motor drives - Battery chargers - Solar (PV inverters) ORDERING INFORMATION Package TO-247AC Lead (Pb)-free and halogen-free SiHG018N60E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 99 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 63 A C a Pulsed drain current I 325 DM Linear derating factor 4.2 W/C b Single pulse avalanche energy E 902 mJ AS Maximum power dissipation P 524 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dv/dt V/ns d Reverse diode dv/dt 9.7 c Soldering recommendations (peak temperature) For 10 s 260 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 120 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 8 A DD J g AS c. 1.6 mm from case d. I I , di/dt = 100 A/s, starting T = 25 C SD D J S19-0101-Rev. B, 04-Feb-2019 Document Number: 92135 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHG018N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -40 thJA C/W Maximum junction-to-case (drain) R -0.24 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.67 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 25 A - 0.021 0.023 DS(on) GS D a Forward transconductance g V = 30 V, I = 45 A - 25 - S fs DS D Dynamic Input capacitance C - 7612 - iss V = 0 V, GS Output capacitance C V = 100 V, - 336 - oss DS f = 1 MHz Reverse transfer capacitance C -4 - rss pF Effective output capacitance, energy C - 251 - a o(er) related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C - 1410 - o(tr) b related Total gate charge Q - 152 228 g Gate-source charge Q V = 10 V I = 45 A, V = 480 V -65 - nC gs GS D DS Gate-drain charge Q -48 - gd Turn-on delay time t -76 114 d(on) Rise time t -87 131 r V = 480 V, I = 32 A, DD D ns V = 10 V, R = 1.8 Turn-off delay time t GS g - 104 156 d(off) Fall time t -17 34 f Gate input resistance R f = 1 MHz, open drain 0.4 0.9 1.8 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 99 S showing the A integral reverse G p - n junction diode Pulsed diode forward current I -- 325 S SM Diode forward voltage V T = 25 C, I = 45 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 745 1490 ns rr T = 25 C, I = I = 45 A, J F S Reverse recovery charge Q -14 28 C rr di/dt = 75 A/s, V = 25 V R Reverse recovery current I -28 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S19-0101-Rev. B, 04-Feb-2019 Document Number: 92135 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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