NTTFS4824NTAG ON Semiconductor

NTTFS4824N MOSFET Power, Single, N-Channel, 8FL 30 V, 69 A Features NTTFS4824N 2. Surfacemounted on FR4 board using the minimum recommended pad size. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit C/W JunctiontoCase (Drain) R 2.7 JC JunctiontoAmbient Steady State (Note 3) R 57.7 JA JunctiontoAmbient Steady State (Note 4) R 187.8 JA JunctiontoAmbient (t 10 s) (Note 3) R 30.3 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 25 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 1.9 2.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 6 mV/C GS(TH) J Coefficient DraintoSource On Resistance R I = 20 A 3.7 5.0 m DS(on) D V = 10 V to 11.5 V GS I = 10 A 3.6 D I = 20 A 5.8 7.5 D V = 4.5 V GS I = 10 A 5.7 D Forward Transconductance g V = 1.5 V, I = 20 A 53 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1750 2363 pF iss Output Capacitance C 350 473 V = 0 V, f = 1.0 MHz, V = 12 V oss GS DS Reverse Transfer Capacitance C 170 255 rss Total Gate Charge Q 12.6 18 nC G(TOT) Threshold Gate Charge Q 1.7 G(TH) V = 4.5 V, V = 15 V, I = 20 A GS DS D GatetoSource Charge Q 4.7 GS GatetoDrain Charge Q 4.8 GD Total Gate Charge Q V = 11.5 V, V = 15 V, I = 20 A 29 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 13 ns d(on) Rise Time t 38 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G TurnOff Delay Time t 18 d(off) Fall Time t 5.5 f 5. Pulse Test: pulse width = 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.