NTTFS4C25NTAG ON Semiconductor

NTTFS4C25N MOSFET Power, Single, N-Channel, 8FL 30 V, 27 A Features Low R to Minimize Conduction Losses DS(on) NTTFS4C25N 3. This is the absolute maximum rating. Parts are 100% tested at T = 25C, J V = 10 V, I = 11 Apk, E = 6 mJ. GS L AS THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 6.2 JC JunctiontoAmbient Steady State (Note 4) R 76.7 JA C/W JunctiontoAmbient Steady State (Note 5) R 210 JA JunctiontoAmbient (t 10 s) (Note 4) R 30.8 JA 4. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 5. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V V = 0 V, I = 4.4 A, 34 (BR)DSSt GS D(aval) V (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 15.3 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.5 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 10 A 13 17 DS(on) GS D m V = 4.5 V I = 9 A 21 26.5 GS D Forward Transconductance g V = 1.5 V, I = 15 A 23 S FS DS D Gate Resistance R T = 25C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 500 ISS Output Capacitance C 295 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 85 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.170 RSS ISS GS DS Total Gate Charge Q 5.1 G(TOT) Threshold Gate Charge Q 0.9 G(TH) nC GatetoSource Charge Q 1.7 V = 4.5 V, V = 15 V I = 20 A GS GS DS D GatetoDrain Charge Q 2.7 GD Gate Plateau Voltage V 3.3 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 20 A 10.3 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) 6. Pulse Test: pulse width 300 s, duty cycle 2%. 7. Switching characteristics are independent of operating junction temperatures.