NTTFS4H05N MOSFET Power, Single, N-Channel, 8-FL 25 V, 94 A Features Optimized Design to Minimize Conduction and Switching Losses www.onsemi.com Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are PbFree, Halogen Free/BFR Free and are RoHS V MAX R TYP Q GS DS(on) GTOT Compliant 4.5 V 4.8 m 8.7 nC Applications 10 V 3.3 m 18.9 nC High Performance DC-DC Converters System Voltage Rails Netcom, Telecom MARKING DIAGRAM Servers & Point of Load 1 1 S D MAXIMUM RATINGS (T = 25C unless otherwise stated) J H05N WDFN8 S D AYWW ( 8FL) S D Parameter Symbol Value Units G D CASE 511AB Drain-to-Source Voltage V 25 V DSS Gate-to-Source Voltage V 20 V GS H05N = Specific Device Code A = Assembly Location Continuous Drain Current R I 22.4 A JA D Y = Year (T = 25C, Note 1) A WW = Work Week Power Dissipation R P 2.66 W JA D = PbFree Package (T = 25C, Note 1) A (Note: Microdot may be in either location) I 94 A Continuous Drain Current R JC D (T = 25C, Note 1) C PIN CONNECTIONS P 46.3 W Power Dissipation R JC D (T = 25C, Note 1) C 8FL (3.3 x 3.3 mm) Pulsed Drain Current (t = 10 s) I 304 A p DM Single Pulse Drain-to-Source Avalanche E 84 mJ AS Energy (Note 1) (I = 41 A , L = 0.1 mH) (Note 3) L pk Drain to Source dV/dt dV/dt 7 V/ns (Top View) (Bottom View) Maximum Junction Temperature T 150 C J(max) Storage Temperature Range T 55 to C STG 150 NCHANNEL MOSFET Lead Temperature Soldering Reflow (SMD T 260 C SLD Styles Only), Pb-Free Versions (Note 2) D (58) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 2 1. Values based on copper area of 645 mm (or 1 in ) of 2 oz copper thickness G (4) and FR4 PCB substrate. 2. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3. This is the absolute maximum rating. Parts are 100% UIS tested at T = 25C, S (1,2,3) J V = 10 V, I = 27 A, E = 36 mJ. GS L AS ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2019 Rev. 4 NTTFS4H05N/DNTTFS4H05N THERMALCHARACTERISTICS Parameter Symbol Max Units Thermal Resistance, C/W Junction-to-Ambient (Note 1 and 4) R 47 JA Junction-to-Case (Note 1 and 4) 2.7 R JC 4. Thermal Resistance R and R as defined in JESD513. JA JC www.onsemi.com 2