NTTFS5811NL Power MOSFET 40 V, 53 A, 6.4 m Features Low R DS(on) NTTFS5811NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 35 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 40 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 1.5 1.7 2.2 V GS(TH) GS DS D Negative Threshold Temperature V /T 6 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V I = 20 A 5.5 6.7 m DS(on) GS D V = 4.5 V I = 20 A 8.3 10 GS D Forward Transconductance g V = 5 V, I = 10 A 24.6 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 1570 pF iss Output Capacitance C 215 oss V = 0 V, f = 1.0 MHz, V = 25 V GS DS Reverse Transfer Capacitance C 157 rss Total Gate Charge Q V = 10 V, V = 32 V, I = 10 A 31 nC G(TOT) GS DS D V = 4.5 V, V = 32 V, I = 10 A 18 GS DS D Threshold Gate Charge Q 1 nC G(TH) GatetoSource Charge Q 5 GS V = 4.5 V, V = 32 V, I = 10 A GS DS D GatetoDrain Charge Q 10 GD Plateau Voltage V 3 V GP Gate Resistance R 0.61 G SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 11 ns d(on) Rise Time t 30 r V = 4.5 V, V = 32 V, GS DS I = 10 A, R = 2.5 D G Turn Off Delay Time t 21 d(off) Fall Time t 12 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.74 1.2 V SD J V = 0 V, GS I = 10 A S T = 125C 0.58 J Reverse Recovery Time t 21 ns RR Charge Time t 11 a V = 0 V, d /d = 100 A/ s, GS IS t I = 10 A S Discharge Time t 10 b Reverse Recovery Charge Q 12 nC RR 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.