NTTFS5C670NL Power MOSFET 60 V, 6.5 m , 70 A, Single NChannel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant V R MAX I MAX (BR)DSS DS(on) D MAXIMUM RATINGS (T = 25C unless otherwise noted) J 6.5 m 10 V Parameter Symbol Value Unit 60 V 70 A 9.1 m 4.5 V DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS NChannel Continuous Drain T = 25C I 70 A C D Current R JC D (5 8) T = 100C 49 (Notes 1, 2, 3, 4) C Steady State Power Dissipation T = 25C P 63 W C D R (Notes 1, 2, 3) JC T = 100C 31 C G (4) Continuous Drain T = 25C I 16 A A D Current R JA T = 100C 11 (Notes 1 & 3, 4) A Steady S (1, 2, 3) State Power Dissipation T = 25C P 3.2 W A D R (Notes 1, 3) JA T = 100C 1.6 MARKING DIAGRAM A 1 Pulsed Drain Current I 440 A T = 25C, t = 10 s A p DM 1 S D Operating Junction and Storage Temperature T , T 55 to C J stg 670L WDFN8 S D +175 AYWW ( 8FL) S D G D CASE 511AB Source Current (Body Diode) I 68 A S Single Pulse DraintoSource Avalanche E 166 mJ AS 670L = Specific Device Code Energy (I = 3.6 A) L(pk) A = Assembly Location Lead Temperature for Soldering Purposes T 260 C Y = Year L (1/8 from case for 10 s) WW = Work Week = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be (Note: Microdot may be in either location) assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit ORDERING INFORMATION See detailed ordering, marking and shipping information in the JunctiontoCase Steady State (Note 3) R 2.4 C/W JC package dimensions section on page 5 of this data sheet. JunctiontoAmbient Steady State (Note 3) R 47 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi ( ) is used as required per JESD5112 for packages in which substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2018 Rev. 2 NTTFS5C670NL/DNTTFS5C670NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 27 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 DSS GS J V = 60 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 50 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 4.7 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 35 A 5.4 6.5 DS(on) GS D m V = 4.5 V I = 35 A 7.3 9.1 GS D Forward Transconductance g V = 15 V, I = 35 A 82 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1400 ISS Output Capacitance C 690 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 15 RSS Total Gate Charge Q V = 4.5 V, V = 30 V I = 35 A 9.0 nC G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 30 V I = 35 A 20 nC G(TOT) GS DS D Threshold Gate Charge Q 2.5 G(TH) GatetoSource Charge Q 4.5 nC GS V = 4.5 V, V = 30 V I = 35 A GS DS D GatetoDrain Charge Q 2.0 GD Plateau Voltage V 3.1 V GP SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 11 d(ON) Rise Time t 60 r V = 4.5 V, V = 30 V, GS DS ns I = 35 A, R = 2.5 D G TurnOff Delay Time t 15 d(OFF) Fall Time t 4 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.9 1.2 SD J V = 0 V, GS V I = 35 A S T = 125C 0.8 J Reverse Recovery Time t 34 RR Charge Time t 17 ns a V = 0 V, dI /d = 100 A/ s, GS S t I = 35 A S Discharge Time t 17 b Reverse Recovery Charge Q 19 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2