NVD5863NL Power MOSFET 60 V, 7.1 m , 82 A, Single NChannel Features Low R to Minimize Conduction Losses DS(on) High Current Capability Avalanche Energy Specified www.onsemi.com AECQ101 Qualified These Devices are PbFree, Halogen Free/BFR Free and are RoHS V R I (BR)DSS DS(on) D Compliant 7.1 m 10 V 60 V 82 A MAXIMUM RATINGS (T = 25C unless otherwise noted) J 9.0 m 4.5 V Parameter Symbol Value Unit D DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS Continuous Drain Cur- T = 25C I 82 A C D NChannel rent R (Note 1) JC G T = 100C 58 C Steady State Power Dissipation R T = 25C P 96 W JC C D (Note 1) S T = 100C 48 C Continuous Drain Cur- T = 25C I 14.9 A A D rent R (Notes 1 & 2) JA T = 100C 11.5 A Steady 4 State P W Power Dissipation R T = 25C 3.1 JA A D (Notes 1 & 2) T = 100C 1.6 A 2 1 3 Pulsed Drain Current T = 25C, t = 10 s I 500 A A p DM Current Limited by T = 25C I 60 A A Dmaxpkg DPAK Package (Note 3) CASE 369AA STYLE 2 Operating Junction and Storage Temperature T , T 55 to C J stg 175 Source Current (Body Diode) I 82 A S MARKING DIAGRAMS Single Pulse DraintoSource Avalanche E 265 mJ AS & PIN ASSIGNMENT Energy (T = 25C, V = 50 V, V = 10 V, J DD GS 4 I = 23 A, L = 1.0 mH, R = 25 ) L(pk) G Drain Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 THERMAL RESISTANCE MAXIMUM RATINGS Drain 1 3 Gate Source Parameter Symbol Value Unit A = Assembly Location* JunctiontoCase Steady State (Drain) R 1.6 C/W JC Y = Year JunctiontoAmbient Steady State (Note 2) R 48 JA WW = Work Week 1. The entire application environment impacts the thermal resistance values 5863L = Device Code shown, they are not constants and are only valid for the particular conditions G = PbFree Package noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. * The Assembly Location Code (A) is front side 3. Continuous DC current rating. Maximum current for pulses as long as 1 optional. In cases where the Assembly Location is second are higher but are dependent on pulse duration and duty cycle. stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: May, 2017 Rev. 2 NVD5863NL/D AYWW 58 63LGNVD5863NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 50 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 48 V DS T = 150C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.0 3.0 V GS(TH) GS DS D Negative Threshold Temperature Co- V /T 6.7 mV/C GS(TH) J efficient DraintoSource On Resistance R V = 10 V, I = 41 A 5.6 7.1 m DS(on) GS D V = 4.5 V, I = 41 A 7.2 9.0 GS D CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance C 3850 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 350 oss V = 25 V DS Reverse Transfer Capacitance C 220 rss Total Gate Charge Q V = 4.5 V, V = 48 V, 36 nC G(TOT) GS DS I = 41 A D Total Gate Charge Q 70 G(TOT) Threshold Gate Charge Q 3.7 G(TH) V = 10 V, V = 48 V, GS DS I = 41 A D GatetoSource Charge Q 12.3 GS GatetoDrain Charge Q 19.4 GD SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 12.8 ns d(on) Rise Time t 24.4 r V = 10 V, V = 48 V, GS DD I = 41 A, R = 2.5 D G TurnOff Delay Time t 37.6 d(off) Fall Time t 55 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.88 1.2 V SD J V = 0 V, GS I = 41 A S T = 150C 0.73 J ns Reverse Recovery Time t 31 RR Charge Time ta 18 V = 0 V, dIs/dt = 100 A/ s, GS I = 41 A S Discharge Time tb 13 Reverse Recovery Charge Q 31 nC RR 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2