NTJD4401N, NVJD4401N MOSFET Dual, N-Channel, Small Signal, ESD Protection, SC-88 20 V www.onsemi.com Features Small Footprint (2 x 2 mm) Low Gate Charge NChannel Device V R Typ I Max (BR)DSS DS(on) D ESD Protected Gate 0.29 4.5 V 20 V 0.63 A Same Package as SC70 (6 Leads) 0.36 2.5 V AECQ101 Qualified and PPAP Capable NVJD4401N These Devices are PbFree and are RoHS Compliant Applications SC88 (SOT363) Load Power Switching LiIon Battery Supplied Devices S 1 6 D 1 1 Cell Phones, Media Players, Digital Cameras, PDAs DCDC Conversion G 2 5 G 1 2 MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage V 20 V DSS D 3 4 S 2 2 GatetoSource Voltage V 12 V GS Continuous Drain Steady T = 25C I 0.63 A A D Top View Current State T = 85C 0.46 (Based on R ) A JA Power Dissipation Steady T = 25C P 0.27 W D A (Based on R ) State JA MARKING DIAGRAM & T = 85C 0.14 A PIN ASSIGNMENT Continuous Drain Steady I A T = 25C 0.91 A D D1 G2 S2 Current State T = 85C 0.65 (Based on R ) A JL 6 1 Power Dissipation Steady T = 25C 0.55 W A TD M (Based on R ) State SC88/SOT363 JL P D T = 85C 0.29 A CASE 419B STYLE 28 Pulsed Drain Current t 10 s I 1.2 A DM 1 Operating Junction and Storage Temperature T , T 55 to S1 G1 D2 J STG C 150 TD = Device Code Continuous Source Current (Body Diode) I 0.63 A S M = Date Code Lead Temperature for Soldering Purposes 260 C = PbFree Package T L (1/8 from case for 10 s) (Note: Microdot may be in either location) THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Typ Max Units ORDERING INFORMATION See detailed ordering and shipping information in the package JunctiontoAmbient Steady State R 400 458 C/W JA dimensions section on page 4 of this data sheet. JunctiontoLead (Drain) Steady State R 194 252 JL Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 7 NTJD4401N/DNTJD4401N, NVJD4401N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 27 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 22 mV/ C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, V = 16 V 1.0 A DSS GS DS GatetoSource Leakage Current I V = 0 V, V = 12 V 10 A GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 0.6 0.92 1.5 V GS(TH) GS DS D Gate Threshold Temperature V /T 2.1 mV/ C GS(TH) J Coefficient DraintoSource On Resistance R V = 4.5 V, I = 0.63 A 0.29 0.375 DS(on) GS D V = 2.5 V, I = 0.40 A 0.36 0.445 GS D Forward Transconductance g V = 4.0 V, I = 0.63 A 2.0 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 33 46 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 13 22 OSS V = 20 V DS Reverse Transfer Capacitance C 2.8 5.0 RSS Total Gate Charge Q 1.3 3.0 nC G(TOT) Threshold Gate Charge Q 0.1 G(TH) V = 4.5 V, V = 10 V, GS DS I = 0.63 A D GatetoSource Charge Q 0.2 GS GatetoDrain Charge Q 0.4 GD SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time td 0.083 s (ON) Rise Time tr 0.227 V = 4.5 V, V = 10 V, GS DD I = 0.5 A, R = 20 D G TurnOff Delay Time td 0.786 (OFF) Fall Time tf 0.506 DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.76 1.1 V SD GS J I =0.23 A S T = 125C 0.63 J Reverse Recovery Time t 0.410 V = 0 V, dI /dt = 100 A/ s, s RR GS S I = 0.63 A S 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2