X-On Electronics has gained recognition as a prominent supplier of NVLUS4C12NTAG MOSFET across the USA, India, Europe, Australia, and various other global locations. NVLUS4C12NTAG MOSFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

NVLUS4C12NTAG ON Semiconductor

NVLUS4C12NTAG electronic component of ON Semiconductor
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See Product Specifications
Part No.NVLUS4C12NTAG
Manufacturer: ON Semiconductor
Category: MOSFET
Description: MOSFET COMP UDFN6 30V 10.7A
Datasheet: NVLUS4C12NTAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2648 ea
Line Total: USD 1.26

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 31 Jul to Tue. 06 Aug
MOQ : 1
Multiples : 1
1 : USD 0.8584
10 : USD 0.8534
25 : USD 0.7975
100 : USD 0.6923
250 : USD 0.6784
500 : USD 0.6784
1000 : USD 0.6784

0
Ship by Wed. 31 Jul to Tue. 06 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.6683

0
Ship by Wed. 31 Jul to Tue. 06 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.7732

0
Ship by Tue. 06 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 2.137
10 : USD 1.0431
100 : USD 0.5823
500 : USD 0.4605
1000 : USD 0.3686
3000 : USD 0.3323
6000 : USD 0.3238

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
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Brand
Forward Transconductance - Min
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We are delighted to provide the NVLUS4C12NTAG from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVLUS4C12NTAG and other electronic components in the MOSFET category and beyond.

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NVLUS4C12N MOSFET Power, Single N-Channel, Cool, 2.0x2.0x0.55 mm UDFN6 30 V, 10.7 A www.onsemi.com Features MOSFET Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving with Exposed Drain Pads for Excellent Thermal Conduction V R MAX I MAX (BR)DSS DS(on) D Ultra Low R to Reduce Conduction Losses DS(on) 9 m 10 V Optimized Gate Charge to Reduce Switching Losses 12 m 4.5 V 30 V 10.7 A Low Capacitance to Minimize Driver Losses 15 m 3.7 V NV Prefix for Automotive and Other Applications Requiring Unique 19 m 3.3 V Site and Control Change Requirements AECQ101 Qualified and PPAP Capable D These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Applications G Power Load Switch Synch DCDC Converters Wireless Charging Circuit S NCHANNEL MOSFET MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit S MARKING DIAGRAM Drain-to-Source Voltage V 30 V D DSS 1 UDFN6 Gate-to-Source Voltage V 20 V GS AGM ( COOL ) Continuous Drain Steady T = 25C I 10.7 A CASE 517BG D A Pin 1 Current (Note 1) State T = 85C 7.7 AG = Specific Device Code A M = Date Code t 5 s T = 25C 15.1 A = PbFree Package Power Dissipa- Steady T = 25C P 1.54 W A D (Note: Microdot may be in either location) tion (Note 1) State t 5 s T = 25C 3.1 A PIN CONNECTIONS Continuous Drain Steady T = 25C I 6.8 A A D Current (Note 2) State T = 85C 4.9 A D 1 6 D Power Dissipation (Note 2) T = 25C P 0.63 W A D D Pulsed Drain Current I 43 A t = 10 s p DM D 2 5 D MOSFET Operating Junction and Storage T , -55 to C J Temperature T 150 STG G 3 4 S Source Current (Body Diode) (Note 1) I 1.55 A S S Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) (Top View) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq See detailed ordering and shipping information in the package 2 oz including traces). dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: June, 2019 Rev. 0 NVLUS4C12N/DNVLUS4C12N 2. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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