X-On Electronics has gained recognition as a prominent supplier of NVLUS4C12NTAG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVLUS4C12NTAG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVLUS4C12NTAG ON Semiconductor

NVLUS4C12NTAG electronic component of ON Semiconductor
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Part No.NVLUS4C12NTAG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET COMP UDFN6 30V 10.7A
Datasheet: NVLUS4C12NTAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.6478 ea
Line Total: USD 1943.4 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.832
10 : USD 0.8271
25 : USD 0.7729
100 : USD 0.671
250 : USD 0.6575
500 : USD 0.6575
1000 : USD 0.6575

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.6478

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.7494

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.0713
10 : USD 1.011
100 : USD 0.5644
500 : USD 0.4464
1000 : USD 0.3573
3000 : USD 0.3221
6000 : USD 0.3138

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Brand
Forward Transconductance - Min
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Product Type
Rise Time
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Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVLUS4C12NTAG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVLUS4C12NTAG and other electronic components in the MOSFETs category and beyond.

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NVLUS4C12N MOSFET Power, Single N-Channel, Cool, 2.0x2.0x0.55 mm UDFN6 30 V, 10.7 A www.onsemi.com Features MOSFET Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving with Exposed Drain Pads for Excellent Thermal Conduction V R MAX I MAX (BR)DSS DS(on) D Ultra Low R to Reduce Conduction Losses DS(on) 9 m 10 V Optimized Gate Charge to Reduce Switching Losses 12 m 4.5 V 30 V 10.7 A Low Capacitance to Minimize Driver Losses 15 m 3.7 V NV Prefix for Automotive and Other Applications Requiring Unique 19 m 3.3 V Site and Control Change Requirements AECQ101 Qualified and PPAP Capable D These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Applications G Power Load Switch Synch DCDC Converters Wireless Charging Circuit S NCHANNEL MOSFET MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit S MARKING DIAGRAM Drain-to-Source Voltage V 30 V D DSS 1 UDFN6 Gate-to-Source Voltage V 20 V GS AGM ( COOL ) Continuous Drain Steady T = 25C I 10.7 A CASE 517BG D A Pin 1 Current (Note 1) State T = 85C 7.7 AG = Specific Device Code A M = Date Code t 5 s T = 25C 15.1 A = PbFree Package Power Dissipa- Steady T = 25C P 1.54 W A D (Note: Microdot may be in either location) tion (Note 1) State t 5 s T = 25C 3.1 A PIN CONNECTIONS Continuous Drain Steady T = 25C I 6.8 A A D Current (Note 2) State T = 85C 4.9 A D 1 6 D Power Dissipation (Note 2) T = 25C P 0.63 W A D D Pulsed Drain Current I 43 A t = 10 s p DM D 2 5 D MOSFET Operating Junction and Storage T , -55 to C J Temperature T 150 STG G 3 4 S Source Current (Body Diode) (Note 1) I 1.55 A S S Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) (Top View) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq See detailed ordering and shipping information in the package 2 oz including traces). dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: June, 2019 Rev. 0 NVLUS4C12N/DNVLUS4C12N 2. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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