AUTOMOTIVE GRADE AUIRF7749L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V 60V (BR)DSS Optimized for Automotive Motor Drive, DC-DC and R typ. 1.1m DS(on) other Heavy Load Applications Exceptionally Small Footprint and Low Profile max. 1.5m High Power Density I 345A D (Silicon Limited) Low Parasitic Parameters Q 183nC g Dual Sided Cooling 175C Operating Temperature Repetitive Avalanche Allowed up to Tjmax S S Lead Free, RoHS Compliant and Halogen Free S S Automotive Qualified * D S D G S S S Applicable DirectFET Outline and Substrate Outline DirectFET2 L-can L8 SB SC M2 M4 L4 L6 L8 Description The AUIRF7749L2 combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging technology to achieve exceptional performance in a package that has the footprint of a D-Pak (TO-252AA) and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET packaging platform coupled with the latest silicon technology allows the AUIRF7749L2 to offer substantial system level savings and performance improvement specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity AUIRF7749L2 DirectFET AUIRF7749L2TR Tape and Reel 4000 Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter Max. Units V Gate-to-Source Voltage 60 V GS I T = 25C Continuous Drain Current, V 10V 345 D C GS I T = 100C Continuous Drain Current, V 10V 243 D C GS I T = 25C Continuous Drain Current, V 10V 36 A D A GS I T = 25C Continuous Drain Current, V 10V (Package limit) 375 D C GS I Pulsed Drain Current 1380 DM P T = 25C Power Dissipation 341 D C W P T = 25C Power Dissipation 3.8 D A E Single Pulse Avalanche Energy (Thermally Limited) 315 AS mJ E (Tested) Single Pulse Avalanche Energy 714 AS I Avalanche Current A AR See Fig. 16, 17, 18a, 18b mJ E Repetitive Avalanche Energy AR T Peak Soldering Temperature 270 P T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at AUIRF7749L2TR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Ambient 40 R JA Junction-to-Ambient 12.5 R JA Junction-to-Ambient 20 R C/W JA Junction-to-Can 0.44 R J-Can Junction-to-PCB Mounted 0.5 R J-PCB Linear Derating Factor 2.3 W/C Static Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 56 mV/C Reference to 25C, I = 3.0mA V /T D (BR)DSS J 1.1 1.5 V = 10V, I = 120A R Static Drain-to-Source On-Resistance m GS D DS(on) V Gate Threshold Voltage 2.0 4.0 V GS(th) V = V , I = 250A DS GS D V /T Gate Threshold Voltage Coefficient -8.8 mV/C GS(th) J gfs Forward Trans conductance 185 S V = 10V, I = 120A DS D R Internal Gate Resistance 1.5 G 20 V = 60V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 60V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 183 275 V = 30V g DS Q Gate-to-Source Charge 39 V = 10V GS gs1 I = 120A Q Gate-to-Source Charge 19 gs2 nC D Q Gate-to-Drain Mille) Charge 46 gd Q Gate Charge Overdrive 79 godr Q Switch Charge (Q + Q) 65 sw gs2 gd Q Output Charge 119 V = 48V, V = 0V oss nC DS GS t Turn-On Delay Time 29 V = 30V, V = 10V d(on) DD GS t Rise Time 149 I = 120A r D ns t Turn-Off Delay Time 72 R = 1.8 d(off) G t Fall Time 88 f C Input Capacitance 10655 V = 0V iss GS C Output Capacitance 1627 V = 25V DS oss pF C Reverse Transfer Capacitance 680 = 1.0 MHz rss C eff. Effective Output Capacitance 1959 V = 0V, V = 0V to 48V oss GS DS Notes through are on page 11 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback August 10, 2015