NVMFD5485NL MOSFET Power, Dual N-Channel 60 V, 44 m , 20 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Designs Low R to Minimize Conduction Losses DS(on) V R MAX I MAX (BR)DSS DS(on) D Low Capacitance to Minimize Driver Losses 44 m 10 V 175C Operating Temperature 60 V 20 A NVMFD5485NLWF Wettable Flank Option for Enhanced Optical 60 m 4.5 V Inspection AECQ101 Qualified and PPAP Capable Dual NChannel This is a PbFree Device D1 D2 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit G1 G2 DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS S1 S2 Continuous Drain T = 25C I 19.5 A C D Current R JC T = 100C 13.8 (Notes 1, 2, 4) C Steady MARKING DIAGRAM State Power Dissipation T = 25C P 38.5 W D D1 D1 C 1 R (Notes 1, 2) JC S1 D1 T = 100C 19.2 C DFN8 5x6 G1 D1 XXXXXX (SO8FL) Continuous Drain T = 25C I 5.3 A A D S2 D2 AYWZZ Current R CASE 506BT JA G2 D2 T = 100C 3.8 (Notes 1, 3 & 4) A Steady D2 D2 State Power Dissipation T = 25C P 2.9 W A D XXXXXX = 5485NL R (Notes 1 & 3) JA T = 100C 1.4 A XXXXXX = (NVMFD5485NL) or XXXXXX = 5485LW Pulsed Drain Current T = 25C, t = 10 s I 113 A A p DM XXXXXX = (NVMFD5485NLWF) Operating Junction and Storage Temperature T , T 55 to C J stg A = Assembly Location 175 Y = Year W = Work Week Source Current (Body Diode) I 37 A S ZZ = Lot Traceability Single Pulse DraintoSource Avalanche E 31 mJ AS Energy (T = 25C, V = 50 V, V = 10 V, J DD GS I = 25 A, L = 0.1 mH, R = 25 ) L(pk) G ORDERING INFORMATION Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the NVMFD5485NLT1G DFN8 1500/ device. If any of these limits are exceeded, device functionality should not be (PbFree) Tape & Reel assumed, damage may occur and reliability may be affected. NVMFD5485NLT3G DFN8 5000/ THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) (PbFree) Tape & Reel Parameter Symbol Value Unit NVMFD5485NLWFT1G DFN8 1500/ C/W JunctiontoCase Steady State (Note 2) R 3.9 JC (PbFree) Tape & Reel JunctiontoAmbient Steady State (Note 3) R 52 JA NVMFD5485NLWFT3G DFN8 5000/ 1. The entire application environment impacts the thermal resistance values shown, (PbFree) Tape & Reel they are not constants and are only valid for the particular conditions noted. For information on tape and reel specifications, 2. Surfacemounted to an ideal (infinite) heat sink. 2 including part orientation and tape sizes, please 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: July, 2019 Rev. 3 NVMFD5485NL/DNVMFD5485NL 4. Maximum current for pulses as long as 1 second are higher but are dependent on pulse duration and duty cycle. www.onsemi.com 2