NVMFD5873NL Power MOSFET 60 V, 13 m , 58 A, Dual NChannel Logic Level, Dual SO8FL Features Small Footprint (5x6 mm) for Compact Designs NVMFD5873NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 54.9 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.8 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V, I = 15 A 10.7 13 m DS(on) GS D V = 4.5 V, I = 10 A 13.6 16.5 GS D Forward Transconductance g V = 5.0 V, I = 15 A 15 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1560 pF iss Output Capacitance C 145 V = 0 V, f = 1.0 MHz, V = 25 V oss GS DS Reverse Transfer Capacitance C 98 rss Total Gate Charge Q 16.5 nC G(TOT) Threshold Gate Charge Q 1.3 G(TH) V = 4.5 V, V = 48 V, GS DS I = 15 A D GatetoSource Charge Q 4.0 GS GatetoDrain Charge Q 8.8 GD Total Gate Charge Q V = 10 V, V = 48V, I = 15 A 30.5 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 10.8 ns d(on) Rise Time t 51 r V = 4.5 V, V = 48 V, GS DS I = 15 A, R = 2.5 D G TurnOff Delay Time t 21 d(off) Fall Time t 42.6 f TurnOn Delay Time t 9.5 ns d(on) Rise Time t 13 r V = 10 V, V = 48 V, GS DS I = 15 A, R = 2.5 D G TurnOff Delay Time t 25 d(off) Fall Time t 6.6 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.0 V SD J V = 0 V, GS I = 15 A S T = 125C 0.7 J Reverse Recovery Time t 22.4 ns RR Charge Time t 14.5 a V = 0 V, d /d = 100 A/ s, GS IS t I = 15 A S Discharge Time t 9.0 b Reverse Recovery Charge Q 18 nC RR 5. Pulse Test: pulse width = 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.