DMT6010LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max Low R Ensures On-State Losses are Minimized D DS(ON) V R Max (BR)DSS DS(ON) T = +25C Excellent Q R Product (FOM) C GD X DS(ON) Advanced Technology for DC-DC Converters 7.5m V = 10V 30A GS Small form factor thermally efficient package enables higher 60V density end products 11.5m V = 4.5V 25A GS Occupies just 33% of the board area occupied by SO-8, enabling smaller end product 100% UIS (Avalanche) Rated Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This MOSFET is designed to minimize the on-state resistance Halogen and Antimony Free. Green Device (Note 3) (R ), yet maintain superior switching performance, making it DS(ON) Qualified to AEC-Q101 Standards for High Reliability ideal for high efficiency power management applications. Applications Mechanical Data Case: PowerDI 3333-8 Synchronous Rectifier Case Material: Molded Plastic,Gree Molding Compound. Backlighting UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections Indicator: See Diagram Terminal Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) Pin 1 S D S S G G D D D D S Equivalent Circuit Bottom View Top View Ordering Information (Note 4) Part Number Case Packaging DMT6010LFG-7 2,000/Tape & Reel PowerDI3333-8 DMT6010LFG-13 3,000/Tape & Reel PowerDI3333-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMT6010LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 60 V V DSS Gate-Source Voltage 20 V V GSS T = +25C 13 A A I D 11 T = +70C A Continuous Drain Current (Note 5) V = 10V GS T = +25C 30 C I A D 24 T = +70C C Maximum Continuous Body Diode Forward Current (Note 5) 3 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 80 A I DM Avalanche Current, L=0.1mH 20 A I AS Avalanche Energy, L=0.1mH E 20 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 2.2 T = +25C A Total Power Dissipation (Note 5) P W D 41 T = +25C C Steady State 55 Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 35 C/W Thermal Resistance, Junction to Case (Note 5) 3 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 48V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage 0.8 2 V V V = V , I = 250A GS(TH) DS GS D 6 7.5 V = 10V, I = 20A GS D Static Drain-Source On-Resistance m RDS(ON) 7.8 11.5 V = 4.5V, I = 20A GS D Diode Forward Voltage V 0.9 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 7) 2,090 Input Capacitance C ISS V = 30V, V = 0V, DS GS 746 Output Capacitance C pF OSS f = 1.0MHz 38.5 Reverse Transfer Capacitance C RSS 0.59 Gate resistance R V = 0V, V = 0V, f = 1.0MHz G DS GS 19.3 Total Gate Charge (V = 4.5V) Q GS G 41.3 Total Gate Charge (V = 10V) Q GS G nC V = 30V, I = 20A DS D Gate-Source Charge 6.0 Q GS Gate-Drain Charge 8.8 Q GD 5.7 Turn-On Delay Time t D(ON) 4.3 Turn-On Rise Time t R V = 30V, V = 10V, DD GS nS 23.4 Turn-Off Delay Time t I = 20A, R = 3, D(OFF) D G 9.7 Turn-Off Fall Time t F Notes: 5. R is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. R is guaranteed by design JA JC while R is determined by the users board design. JA 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 6 DMT6010LFG January 2016 Diodes Incorporated www.diodes.com Document number: DS36620 Rev. 4 - 2 NEW PRODUCT ADVANCE INFORMATION