NTR1P02, NVR1P02 MOSFET Power, P-Channel, SOT-23 -20 V, -1 A Features www.onsemi.com Ultra Low OnResistance Provides Higher Efficiency and Extends Battery Life R = 0.180 , V = 10 V DS(on) GS V R TYP I MAX (BR)DSS DS(on) D R = 0.280 , V = 4.5 V DS(on) GS 20 V 148 m 10 V 1.0 A Power Management in Portable and BatteryPowered Products Miniature SOT23 Surface Mount Package Saves Board Space Mounting Information for SOT23 Package Provided PChannel D NVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant G Applications DCDC Converters Computers S Printers PCMCIA Cards MARKING DIAGRAM/ PIN ASSIGNMENT Cellular and Cordless Telephones 3 3 MAXIMUM RATINGS (T = 25C unless otherwise noted) Drain J 1 Rating Symbol Value Unit 2 P2 DraintoSource Voltage V 20 V DSS SOT23 GatetoSource Voltage Continuous V 20 V GS CASE 318 Drain Current A STYLE 21 1 2 Gate Source Continuous T = 25C I 1.0 A D Pulsed Drain Current (t 1 s) I 2.67 p DM P2 = Specific Device Code Total Power Dissipation T = 25C P 400 mW A D M = Date Code Operating and Storage Temperature Range T , T 55 to C J stg = PbFree Package 150 (Note: Microdot may be in either location) Thermal Resistance JunctiontoAmbient R 300 C/W JA ORDERING INFORMATION Maximum Lead Temperature for Soldering T 260 C L Purposes, (1/8 from case for 10 s) Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be NTR1P02T1G SOT23 3000 / Tape & Reel assumed, damage may occur and reliability may be affected. (PbFree) NTR1P02T3G SOT23 10000 / Tape & Reel (PbFree) NVR1P02T1G SOT23 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: June, 2019 Rev. 8 NTR1P02T1/D MNTR1P02, NVR1P02 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V (BR)DSS 20 V (V = 0 V, I = 10 A) GS D 32 mV/C (Positive Temperature Coefficient) Zero Gate Voltage Drain Current I A DSS (V = 20 V, V = 0 V, T = 25C) 1.0 DS GS J (V = 20 V, V = 0 V, T = 150C) 10 DS GS J GateBody Leakage Current (V = 20 V, V = 0 V) I 100 nA GS DS GSS ON CHARACTERISTICS (Note 1) Gate Threshold Voltage V GS(th) (V = V , I = 250 A) 1.1 1.9 2.3 V DS GS D (Negative Temperature Coefficient) 4.0 mV/C Static DraintoSource OnState Resistance R DS(on) (V = 10 V, I = 1.5 A) 0.148 0.180 GS D (V = 4.5 V, I = 0.75 A) 0.235 0.280 GS D DYNAMIC CHARACTERISTICS Input Capacitance C 165 pF iss (V = 5 V, V = 0 V, f = 1.0 MHz) DS GS Output Capacitance C 110 oss (V = 5 V, V = 0 V, f = 1.0 MHz) DS GS Reverse Transfer Capacitance C 35 rss (V = 5 V, V = 0 V, f = 1.0 MHz) DS GS SWITCHING CHARACTERISTICS (Note 2) TurnOn Delay Time t 7.0 ns d(on) (V = 15 V, I = 1 A, V = 5 V, R = 2.5 ) DD D GS G Rise Time t 9.0 r (V = 15 V, I = 1 A, V = 5 V, R = 2.5 ) DD D GS G TurnOff Delay Time t 9.0 d(off) (V = 15 V, I = 1 A, V = 5 V, R = 2.5 ) DD D GS G Fall Time t 3.0 f (V = 15 V, I = 1 A, V = 5 V, R = 2.5 ) DD D GS G nC Total Gate Charge Q 2.5 tot (V = 15 V, V = 5 V, I = 0.8 A) DS GS D GateSource Charge Q 0.75 gs (V = 15 V, V = 5 V, I = 0.8 A) DS GS D GateDrain Charge Q 1.0 gd (V = 15 V, V = 5 V, I = 0.8 A) DS GS D BODYDRAIN DIODE RATINGS (Note 1) Diode Forward OnVoltage (Note 2) V V SD (I = 0.6 A, V = 0 V) 0.8 1.0 S GS (I = 0.6 A, V = 0 V, T = 150C) 0.6 S GS J Reverse Recovery Time t 13.5 ns rr (I = 1 A, dI /dt = 100 A/ s, V = 0 V) S S GS t 10.5 a t 3.0 b Reverse Recovery Stored Charge Q 0.008 C RR (I = 1 A, dI /dt = 100 A/ s, V = 0 V) S S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. www.onsemi.com 2