X-On Electronics has gained recognition as a prominent supplier of NVS4409NT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVS4409NT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVS4409NT1G ON Semiconductor

NVS4409NT1G electronic component of ON Semiconductor
NVS4409NT1G ON Semiconductor
NVS4409NT1G MOSFETs
NVS4409NT1G  Semiconductors

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See Product Specifications
Part No. NVS4409NT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET
Datasheet: NVS4409NT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.37 ea
Line Total: USD 0.37 
Availability - 8067
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
417
Ship by Fri. 28 Feb to Wed. 05 Mar
MOQ : 5
Multiples : 5
5 : USD 0.2128
50 : USD 0.1692
150 : USD 0.1242
500 : USD 0.1006
3000 : USD 0.0908
6000 : USD 0.0856

8067
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ : 1
Multiples : 1
1 : USD 0.37
10 : USD 0.2262
100 : USD 0.0984
1000 : USD 0.0814
3000 : USD 0.0649
9000 : USD 0.0616
24000 : USD 0.0605
45000 : USD 0.0583
99000 : USD 0.0572

11640
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.0837
9000 : USD 0.0744

8735820
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.078

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Operating Temperature Classification
Operating Temp Range
Number Of Elements
Mounting
Package Type
Continuous Drain Current
Gate-Source Voltage Max
Type
Power Dissipation
Rad Hardened
Polarity
Drain-Source On-Volt
Pin Count
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the NVS4409NT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVS4409NT1G and other electronic components in the MOSFETs category and beyond.

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The NVS4409NT1G is an N-channel enhancement mode Junction Field Effect Transistor (JFET) manufactured by ON Semiconductor. It is a silicon gate, self-aligning MOSFET designed for high performance, low threshold voltage applications. It features a maximum drain-source voltage of 25V with a continuous drain current of 0.13A. The minimum gate-source voltage is -3V while the maximum gate-source voltage is 6V. This MOSFET is designed to provide reliable switching, low on-state drain-source resistance, and improved noise immunity. It has a maximum power dissipation of 500mW and a thermal resistance category of 155°C/W. This transistor is available in a SOT-23 package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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