NVTFS4C13N MOSFET Power, Single N-Channel, 8FL 30 V, 9.4 m , 40 A Features Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVTFS4C13NWF Wettable Flanks Product V R MAX I MAX (BR)DSS DS(ON) D NVT Prefix for Automotive and Other Applications Requiring 9.4 m 10 V Unique Site and Control Change Requirements AECQ101 30 V 40 A 14 m 4.5 V Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS D (5,6) Compliant MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS G (4) GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 14 A A D S (1,2,3) Current R JA T = 100C 10 NCHANNEL MOSFET (Notes 1, 2, 4) A Power Dissipation R T = 25C P 3.0 W JA A D (Note 1, 2, 4) MARKING DIAGRAM T = 100C 1.5 Steady A 1 State Continuous Drain T = 25C I 40 C D 1 S D Current R (Note 1, JC XXXX WDFN8 S D T = 100C 28 A 3, 4) C AYWW ( 8FL) S D T = 25C 26 W Power Dissipation P G D C D CASE 511AB R (Note 1, 3, 4) JC T = 100C 13 C Pulsed Drain Current I 152 A T = 25C, t = 10 s A p DM 4C13 = Specific Device Code for Operating Junction and Storage Temperature T , 55 to C NVMTS4C13N J T +175 stg 13WF = Specific Device Code of NVTFS4C13NWF Source Current (Body Diode) I 24 A S A = Assembly Location Single Pulse DraintoSource Avalanche Energy E 10 mJ AS Y = Year (T = 25C, I = 14 A , L = 0.1 mH) J L pk WW = Work Week Lead Temperature for Soldering Purposes T 260 C = PbFree Package L (1/8 from case for 10 s) (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of THERMAL RESISTANCE MAXIMUM RATINGS this data sheet. Parameter Symbol Value Unit JunctiontoCase Steady State (Drain) 5.8 R JC (Notes 1 and 4) C/W JunctiontoAmbient Steady State 50 R JA (Notes 1 and 2) 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm 2 oz. Cu pad. 3. Assumes heatsink sufficiently large to maintain constant case temperature independent of device power. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2019 Rev. 2 NVTFS4C13N/DNVTFS4C13N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 14.9 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.1 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.8 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 7.5 9.4 DS(on) GS D m V = 4.5 V I = 12 A 11.2 14 GS D Forward Transconductance g V = 1.5 V, I = 15 A 40 S FS DS D Gate Resistance R T = 25C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 770 ISS Output Capacitance C V = 0 V, f = 1 MHz, V = 15 V 443 pF OSS GS DS Reverse Transfer Capacitance C 127 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.165 RSS ISS GS DS Total Gate Charge Q 7.8 G(TOT) Threshold Gate Charge Q 1.4 G(TH) nC GatetoSource Charge Q 2.9 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 3.7 GD Gate Plateau Voltage V 3.6 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 15.2 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 9 d(ON) Rise Time t 35 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 13 d(OFF) Fall Time t 5 f TurnOn Delay Time t 6.0 d(ON) Rise Time t 26 r V = 10 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 TurnOff Delay Time t D G 16 d(OFF) Fall Time t 3.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.82 1.1 SD J V = 0 V, GS V I = 30 A S T = 125C 0.69 J Reverse Recovery Time t 23.4 RR Charge Time t 12.1 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 30 A S Discharge Time t 11.3 b Reverse Recovery Charge Q 9.7 nC RR 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2