MOSFET - Power, Single N-Channel, 8FL 30 V, 17 m , 22 A NVTFS4C25N Features Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V R MAX I MAX (BR)DSS DS(on) D NVTFS4C25NWF Wettable Flanks Product 17 m 10 V NVT Prefix for Automotive and Other Applications Requiring 30 V 22 A 26.5 m 4.5 V Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS NChannel MOSFET Compliant D (58) MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage V 30 V G (4) DSS GatetoSource Voltage V 20 V GS S (1,2,3) Continuous Drain T = 25C I 10.1 A A D Current R JA Steady T = 85C 7.8 (Notes 1, 3, 5) A State MARKING DIAGRAM P W Power Dissipation R T = 25C 3.0 JA A D 1 (Notes 1, 3, 5) 1 S D T = 85C 1.8 A XXXX WDFN8 S D Continuous Drain T = 25C I 22.1 A AYWW C D ( 8FL) S D Current R JC G D CASE 511AB Steady T = 85C 17.1 (Notes 1, 2, 4, 5) C State Power Dissipation T = 25C P 14.3 W D C 4C25 = Specific Device Code for R (Notes 1, 2, 4, 5) JC T = 85C 8.6 NVMTS4C25N C 25WF = Specific Device Code of Pulsed Drain Current T = 25C, t = 10 s I 90 A A p DM NVTFS4C25NWF Operating Junction and Storage Temperature T , 55 to C A = Assembly Location J T +175 Y = Year stg WW = Work Week Source Current (Body Diode) I 14 A S = PbFree Package Single Pulse DraintoSource Avalanche Energy E 11.2 mJ AS (Note: Microdot may be in either location) (T = 25C, I = 6.7 A , L = 0.5 mH) J L pk Lead Temperature for Soldering Purposes T 260 C L ORDERING INFORMATION (1/8 from case for 10 s) See detailed ordering and shipping information on page 6 of Stresses exceeding those listed in the Maximum Ratings table may damage the this data sheet. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown they are not constants and are valid for the specific conditions noted. 2. Psi ( ) is used as required per JESD51 12 for packages in which substantially less than 100% of the heat flows to a single case surface. 2 3. Surfacemounted on FR4 board using 650 mm , 2 oz. Cu Pad. 4. Assumes heatsink sufficiently large to maintain constant case temperature independent of device power. 5. Continuous DC current rating. Maximum current for pulses as long as one second is higher but dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: September, 2019 Rev. 2 NVTFS4C25N/DNVTFS4C25N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) (Notes 6, 7 and 9) 10.5 JC C/W JunctiontoAmbient Steady State (Notes 6 and 8) R 50 JA 6. The entire application environment impacts the thermal resistance values shown they are not constants and are valid for the specific conditions noted. 7. Psi ( ) is used as required per JESD5112 for packages in which substantially less than 100% of the heat flows to a single case surface. 2 8. Surfacemounted on FR4 board using 650 mm , 2 oz. Cu Pad. 9. Assumes heatsink sufficiently large to maintain constant case temperature independent of device power. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 30 V V = 0 V, I = 250 A (BR)DSS GS D DraintoSource Breakdown Voltage V / 15.3 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J A V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 10) Gate Threshold Voltage V 1.3 2.2 V V = V , I = 250 A GS(TH) GS DS D Threshold Temperature Coefficient V /T 4.5 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 10 A 13 17 DS(on) GS D m V = 4.5 V I = 9 A 21 26.5 GS D Forward Transconductance g V = 1.5 V, I = 15 A 23 S FS DS D Gate Resistance R T = 25C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 500 ISS Output Capacitance C V = 0 V, f = 1 MHz, V = 15 V 295 pF GS DS OSS Reverse Transfer Capacitance C 85 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.170 RSS ISS GS DS Total Gate Charge Q 5.1 G(TOT) Threshold Gate Charge Q 0.9 G(TH) nC GatetoSource Charge Q V = 4.5 V, V = 15 V I = 20 A 1.7 GS GS DS D GatetoDrain Charge Q 2.7 GD Gate Plateau Voltage V 3.3 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 20 A 10.3 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 11) TurnOn Delay Time t 8.0 d(ON) Rise Time t 32 r V = 4.5 V, V = 15 V, GS DS ns I = 10 A, R = 3.0 D G TurnOff Delay Time t 10 d(OFF) Fall Time t 3.0 f TurnOn Delay Time t 4.0 d(ON) Rise Time t 25 r V = 10 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 13 d(OFF) Fall Time t 2.0 f 10.Pulse Test: pulse width 300 s, duty cycle 2%. 11. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2