NVTFS5124PL MOSFET Power, Single P-Channel -60 V, -6 A, 260 m Features Small Footprint (3.3 x 3.3 mm) for Compact Design NVTFS5124PL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 3 A 200 260 m DS(on) GS D V = 4.5 V, I = 3 A 290 380 GS D Forward Transconductance g V = 15 V, I = 5 A 4 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 250 iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 27 pF oss V = 25 V DS Reverse Transfer Capacitance C 17 rss Total Gate Charge Q 3.5 G(TOT) Threshold Gate Charge Q 0.4 G(TH) V = 4.5 V, V = 48 V, GS DS I = 3 A D GatetoSource Charge Q 1.2 GS nC GatetoDrain Charge Q 1.9 GD Total Gate Charge Q V = 10 V, V = 48 V, 6 G(TOT) GS DS I = 3 A D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 7 d(on) Rise Time t 14 r V = 4.5 V, V = 48 V, GS DS ns I = 3 A, R = 2.5 D G TurnOff Delay Time t 13 d(off) Fall Time t 10 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.87 1.0 V SD GS J I = 3 A S T = 125C 0.74 J Reverse Recovery Time t 17 ns RR V = 0 V, Charge Time t 14 GS a dI /dt = 100 A/ s, S Discharge Time t 3 b I = 3 A S Reverse Recovery Charge Q 19 nC RR 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.